2013 Fiscal Year Final Research Report
Self-organization of adsorbate crystal morphology on a heteroepitaxial surface
| Project/Area Number |
23540456
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Mathematical physics/Fundamental condensed matter physics
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| Research Institution | Keio University |
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Principal Investigator |
SAITO YUKIO 慶應義塾大学, 理工学部, 教授 (20162240)
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| Project Period (FY) |
2011 – 2013
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| Keywords | ヘテロエピタキシー / 微細加工基板 / 格子歪み / 濡れー脱濡れ / 島拡散 / ピン止め / 結晶粒粗大化 / 動的モンテカルロ・シミュレーション |
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| Research Abstract |
In heteroepitaxial growth, materials of the substrate and of the overlayer crystal are different. In order to decrease the effect of strain energy induced by the lattice misfit, nanostructures are sometimes fabricated on a substrate. We found that the crystal dewetting is different from the liquid dewetting; for instance, an adsorbate crystal island arranges itself in an asymmetric position on a substrate pillar, or a crystal island collapses only partially. When Si islands evaporate on SiO2 substrate at high temperatures, they diffuse around with a diffusion constant almost independent of the island size. We attributed this anomalous diffusion to the pinning-depinning phenomenon of the island edge at rough corners of the Si/SiO2 interface produced by chemical reactions. We also studied scaling behavior of the grain coarsening during the unidirectional solidification of multicrystals on a substrate.
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