2013 Fiscal Year Final Research Report
SEMICONDUCTING PROPERTIES OF BORON-CHELATING BITHIOPHENE DERIVATIVES EXTENDED BY OLEFINIC AND ACETYLENIC SPACERS
| Project/Area Number |
23550050
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Organic chemistry
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
ONO Katsuhiko 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (20335079)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 有機導体 / ホウ素 / π電子系 / 半導体物性 / 先端機能デバイス |
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| Research Abstract |
Boron-chelating bithiophene derivatives containing olefinic and acetylenic spacers have synthesized in the research and development of n-type organic semiconductors. These compounds have a quadrupolar structure, in which two positive charges are delocalized on the pi-conjugated system and two negative charges are localized on each boron atom. The olefinic spacers effectively reduce the on-site Coulomb repulsion on the pi-conjugated system according to the electrochemical experiments and hydrolytic analysis. In the crystals, these molecules are stacked into a molecular column, which is assembled to form a layer-by-layer structure. The n-type semiconducting properties of the new compounds are under study.
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