2013 Fiscal Year Final Research Report
Preparation and properties of TiO2n-1 thin film via reduction of TiO2 film
Project/Area Number |
23550204
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Functional materials/Devices
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Research Institution | Gifu University |
Principal Investigator |
OHYA Yutaka 岐阜大学, 工学部, 教授 (80167311)
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Project Period (FY) |
2011 – 2013
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Keywords | チタン酸化物 / チタニア-シリカ複合膜 / ゾルゲル法 / 薄膜 |
Research Abstract |
Aqueous precursors for titania and silica were prepared using titan tetraisopropoxide and silicon tetraethoxide, respectively, with addition of tetramethylammonium hydroxide. Appropriate amount of the two precursors were mixed and silica-titania composite films were dip-coated. After heating at 700C, the resultant films were reduced under nitrogen-hydrogen mixture or nitrogen with low oxygen partial pressure, which was controlled using zirconia oxygen pump. The temperatures of the reduction were 1000 and 1200C for up to 1 week. By reducing in nitrogen-hydrogen mixture gas, the formation of Ti3O5 was confirmed. On the other hand, the films reduced under the controlled low oxygen partial pressure of 10e-22 atm were not. The conditions of reduction in low oxygen partial pressure at tested temperatures are enough to reduce titanium dioxide. A reason why the reduced oxide was not detected was an evaporation of the reduced oxide and this was suggested by some experiments.
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[Journal Article] Theory and the experimental confirmation of the local electronic structure of the multiferroic PbVO_3, a new member of PbTiO_3 family, studied by X-ray near edge absorption structure2012
Author(s)
S. Alam, J. Ahmad, Y Ohya, D. Chungli, C.-C. Hsu, J.-F. Lee, M. Shima, K. Miki, S. S. Al-Deyab, J. Guo, C. Nishimura
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Journal Title
J. Phys. Soc. Jpn
Volume: 81 (7)
Pages: 074709/1-074709/10
DOI
Peer Reviewed
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[Patent(Industrial Property Rights)] 熱電対2012
Inventor(s)
大矢豊、伴隆幸、櫻田修、吉田道之, ほか4名
Industrial Property Rights Holder
(株)チノー、岐阜大学、JFCC
Industrial Property Rights Type
特許
Industrial Property Number
特願2012-153179
Filing Date
2012-07-09
Overseas