Nanoscale control of physical properties of grapheen by site-selective epitaxy of graphene using substrate microfabrication

2014 Fiscal Year Final Research Report

• Project/Area Number: 23560003
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: FUKIDOME Hirokazu 東北大学, 電気通信研究所, 准教授 (10342841)
• Co-Investigator(Kenkyū-buntansha): KAWAI Yusuke 東北大学, 大学院工学研究科, 助教 (20451536) ; KOTSUGI Masato 公益財団法人高輝度光科学研究センター, 利用研究促進部門, 研究員 (60397990) ; KOMEDA Tadahiro 東北大学, 多元物質科学研究所, 教授 (30312234)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Keywords: 界面 / グラフェン / SiC / 基板微細加工

Outline of Final Research Achievements

Graphene is a promising next-generation device material. To realize graphene-based devices, it is significant to utilize unique characters of graphene physical properties. We have therefore performed a study on a nanoscale control of structural and electronic properties of graphene by using substrate microfabrication.
In this study, we formed graphene on SiC thin films on a microfabricated Si substrate. The interface structure of graphene thus formed depends on the microscopic crystallographic orientation of the substrate. As a result of this, we found that the stacking and therefore band structure of graphene is controlled by this method.

Free Research Field

表面界面物性