2013 Fiscal Year Final Research Report
Improvement in a vacuum ultraviolet ellipsometer for measuring absolute complex dielectric constants of anisotropic III-V nitride semiconductors
| Project/Area Number |
23560006
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Fukui |
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Principal Investigator |
FUKUI Kazutoshi 福井大学, 工学(系)研究科(研究院), 教授 (80156752)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 異方性 / 窒化物半導体 / 放射光 / エリプソメータ |
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| Research Abstract |
Semiconductor devices such as LED and photodiode are promising ones for not only visible but also ultraviolet region. However, investigations into the optical properties of these semiconductor materials require wide wavelength region including vacuum ultraviolet (VUV). Then, our final target is the permanent installation of a very unique VUV ellipsometer with the synchrotron radiation to measure absolute complex refractive indices of those semiconductor materials from visible to VUV, because synchrotron radiation is the ideal ultraviolet light source. Then, we have been constructing a synchrotron dedicated ellipsometer and over-all operation testing will be carried out at the next machine time.
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