2013 Fiscal Year Final Research Report
Control of band structure of multiple band gap semiconductor and its application to high-efficiency solar cell
Project/Area Number |
23560007
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | University of Yamanashi |
Principal Investigator |
NABETANI Yoichi 山梨大学, 医学工学総合研究部, 准教授 (30283196)
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Co-Investigator(Kenkyū-buntansha) |
MATSUMOTO Takashi 山梨大学, 名誉教授 (00020503)
MURANAKA Tsutomu 山梨大学, 医学工学総合研究部, 准教授 (20374788)
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Project Period (FY) |
2011 – 2013
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Keywords | 太陽電池 |
Research Abstract |
Sun shine is one of the most important renewable energies. We have grown semiconductors which has an intermediate band gap to increase the efficiency of solar cell. We have investigated that the ZnTeO alloy which consists of ZnTe and O has intermediate band. To utilize semiconductor as solar cell, pn junction is needed. However, it is difficult to make n-type ZnTe because of self-compensation. We have made n-type ZnTeO by Al-diffusion.
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Research Products
(12 results)
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[Presentation] Photocurrent Property of ZnTeO Layer2013
Author(s)
Junichi Hinata, Naoki Tsuboya, Yoichi Nabetani, Tsutomu Muranaka, and Takashi Matsumoto
Organizer
The 16th International Conference on II-VI Compounds and Related Materials
Place of Presentation
Nagahama
Year and Date
2013-09-10
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