2013 Fiscal Year Final Research Report
Formation, migration and annihilation of plasma-induced defects in gallium nitride (GaN)
| Project/Area Number |
23560011
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo Metropolitan University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2013
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| Keywords | 窒化ガリウム / プラズマ照射誘起欠陥 / 増速拡散 / 深い準位 / ドーパント不活性化 / 光容量分光法 |
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| Research Abstract |
The dopant deactivation is a critical issue during plasma processing for GaN-related devices. In this study, we have focused on the effect of the plasma emission as well as the charge-state of the defects responsible for the dopant deactivation. Electron-hole pair generation upon the above-gap light (UV light) absorption is essential to the migration, but not to the formation of the source defects. Rather low-temperature (below 200 C) annealing restores the deactivated Si-donors in n-GaN, while the restoring rate depends significantly on the charge state of the defects (the electron density around the deactivated donors).
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