2013 Fiscal Year Final Research Report
studies of mid-infrared devices using new materials and structures
| Project/Area Number |
23560012
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
KAWAMURA Yuichi 大阪府立大学, 工学(系)研究科(研究院), 教授 (80275289)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 分子線結晶成長 / 化合物半導体 / 量子井戸 / 赤外デバイス |
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| Research Abstract |
Dilute nitride semiconductors on InP for mid-infrared optical devices were studies. InAsSbN strained quantum well laser diodes were fbricataed and obtained laser operation at 2.36mm wavelength at 300K. InGaAsN/aAsSb MQW diodes were also fabricated. Light emission at 2.86mm was obtained at 300K.
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