2013 Fiscal Year Final Research Report

Liquid phase growth of nitride semiconductors by using plasma mixture of nitrogen and hydrogen

Research Project

Project/Area Number	23560014
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Multi-year Fund
Section	一般
Research Field	Applied materials science/Crystal engineering
Research Institution	Shizuoka Institute of Science and Technology
Principal Investigator	OZAWA Tesuo 静岡理工科大学, 理工学部, 教授 (90247578)
Project Period (FY)	2011 – 2013
Keywords	窒化物 / 液相成長 / プラズマ / バルク成長 / 混晶 / 半導体
Research Abstract	GaN single crystals of wurtzite structure were grown on the AlN/Al2O3 substrate by reacting gallium metal with atomic nitrogen-hydrogen in a microwave plasma. AlN/Al2O3 substrates were prepared by nitriding (0001) sapphire substrates with atomic nitrogen in a microwave plasma. GaN layer of about 10 m was grown on AlN/Al2O3 substrate with a growth rate of 2.5 m/h. It was found that the layer was nearly oriented to (0001)GaN//(0001) sapphire by X-ray diffraction (XRD) measurement. PL spectrum showed a strong band edge emission at 3.3 eV at room temperature without a yellow emission due to deep level. A full-width at half-maximum was approximately 230 meV. These properties suggest high crystalline GaN was grown on the AlN/Al2O3 substrate by solution growth under nitrogen and hydrogen plasma mixture. InxGa1-xN(x<0.15)single crystals were also grown by our methods.