A novel current injection in wide bandgap semiconductors with tunnel junctions

2013 Fiscal Year Final Research Report

• Project/Area Number: 23560015
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Meijo University
• Principal Investigator: TAKEUCHI Tetsuya 名城大学, 理工学部, 准教授 (10583817)
• Research Collaborator: KAMIYAMA Satoshi 名城大学, 理工学部, 教授 (10340291) ; IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735)
• Project Period (FY): 2011 – 2013
• Keywords: ワイドギャップ半導体 / 窒化物半導体 / トンネル接合 / 低抵抗化 / 水素脱理

Research Abstract

The objective of this research is to develop a novel current injection in wide bandgap semiconductors, especially nitride semiconductors which are supreme materials for light emitting and detecting devices covering the ranges from infrared to deep ultraviolet. Such wide bandgap materials show highly resistive p-layers, resulting in poor characteristics of ultraviolet light emitting devices. In the research very low resistive tunnel junctions have been obtained. The highly resistive p-layers are replaced with the low resistive n-layers by the tunnel junctions, leading to novel light emitting and detecting devices. High In content GaInN tunnel junctions show one order of magnitude lower resistances than before. Current confinement micro light emitting diodes, micro displays and tandem solar cells have been developed with the tunnel junctions. The novel current injection with tunnel junctions has been established.

Research Products

• [Journal Article] (2014)
  • Author(s): M. Watanabe, K. Nakajima, M. Kaga, Y. Kuwano, D. Minamikawa, T. Suzuki, K. Yamashita, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53 Pages: 05FL06
  • Peer Reviewed
• [Journal Article] (2014)
  • Author(s): H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and Amano
  • Journal Title: Appl. Phys. Exp. Volume: 7 Pages: 0341041
  • Peer Reviewed
• [Journal Article] (2013)
  • Author(s): M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52 Pages: 08JH06
  • Peer Reviewed
• [Journal Article] (2013)
  • Author(s): Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52 Pages: 08JK12
  • Peer Reviewed
• [Journal Article] (2013)
  • Author(s): T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and Isamu Akasaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52 Pages: 08JJ05
  • Peer Reviewed
• [Journal Article] (2011)
  • Author(s): 山下浩司、加賀充、矢木康太、鈴木敦、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Journal Title: 電子情報通信学会技術研究報告 Volume: 111 Pages: 99
• [Journal Article] (2011)
  • Author(s): 加賀充、飯田大輔、北野司、山下浩司、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Journal Title: 電子情報通信学会技術研究報告 Volume: 111 Pages: 105
• [Presentation] (2014)
  • Author(s): T. Takeuchi, D. Minamikawa, Y. Kuwano, M. Watanabe, M. Iwaya, S. Kamiyama, I. Akasaki
  • Organizer: International conference on metamaterials and nanophysics 2014
  • Place of Presentation: Varadero, Cuba
  • Year and Date: 20140400
  • Invited
• [Presentation] (2014)
  • Author(s): T. Morita, M. Kaga, Y. Kuwano, K. Matsui, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
  • Organizer: Conference on LED and its Industrial Application 2013
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 20140400
• [Presentation] (2014)
  • Author(s): M. Ino, Y. Kuwano, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
  • Organizer: Conference on LED and its Ondustrial Application 2014
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 20140400
• [Presentation] (2014)
  • Author(s): Y. Kuwano, M. Ino, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
  • Organizer: 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 20140300
• [Presentation] (2014)
  • Author(s): 桑野侑香、堀川航佑、森田隆敏、井野匡貴、竹内哲也、岩谷素顕、上山智、赤崎勇
  • Organizer: 第61回春季応用物理学会学術講演会
  • Place of Presentation: 相模原
  • Year and Date: 20140300
• [Presentation] (2014)
  • Author(s): 井野匡貴、森田隆敏、桑野侑香、渡邉雅大、竹内哲也、上山智、岩谷素顕、赤崎勇
  • Organizer: 第61回春季応用物理学会学術講演会
  • Place of Presentation: 相模原
  • Year and Date: 20140300
• [Presentation] (2013)
  • Author(s): 竹内哲也、岩谷素顕、上山智、赤崎勇
  • Organizer: 日本学術振興ワイドギャップ半導体光・電子デバイス第162委員会第86回研究会
  • Place of Presentation: 名城大、名古屋
  • Year and Date: 20131000
  • Invited
• [Presentation] (2013)
  • Author(s): M. Watanabe, M. Kaga, T. Suzuki, D. Minamikawa, Y. Kuwano, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 20130900
• [Presentation] (2013)
  • Author(s): 中島啓介、渡邉雅大、加賀充、鈴木智行、南川大智、竹内哲也、上山智、岩谷素顕、赤崎勇
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 京都
  • Year and Date: 20130900
• [Presentation] (2013)
  • Author(s): 黒川泰視、合田智美、加賀充、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 京都
  • Year and Date: 20130900
• [Presentation] (2013)
  • Author(s): M. Watanabe, M. Kaga, K. Yamashita, T. Suzuki, D. Minamikawa, Y. Kuwano, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
  • Organizer: 10th International Conference of Nitride Semiconductors
  • Place of Presentation: Washington DC, USA
  • Year and Date: 20130800
• [Presentation] (2013)
  • Author(s): D. Minamikawa, M. Kaga, Y. Kuwano, T. Morita, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
  • Organizer: Asia-Pacific Workshop on Widegap Semiconductors 2013
  • Place of Presentation: New Taipei City, Taiwan
  • Year and Date: 20130300
• [Presentation] (2013)
  • Author(s): 森田隆敏、加賀充、桑野侑香、松井健城、渡邉雅大、竹内哲也、上山智、岩谷素顕、赤崎勇
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
  • Year and Date: 20130300
• [Presentation] (2013)
  • Author(s): 桑野侑香、加賀充、森田隆敏、山下浩司、南川大智、竹内哲也、岩谷素顕、上山智、赤崎勇
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
  • Year and Date: 20130300
• [Presentation] (2012)
  • Author(s): M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 20121000
• [Presentation] (2012)
  • Author(s): T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and Isamu Akasaki
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 20121000
• [Presentation] (2012)
  • Author(s): Y. Kuwano, M. Kaga, T. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 20121000
• [Presentation] (2012)
  • Author(s): 森田隆敏、加賀充、桑野侑香、松井健城、岩谷素顕、竹内哲也、上山智、赤崎勇
  • Organizer: 第73回応用物理学会講演会
  • Place of Presentation: 愛媛
  • Year and Date: 20120900
• [Presentation] (2012)
  • Author(s): M. Kaga, M. Yamashita, T. Morita, Y. Kuwano, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
  • Organizer: 16th International Conference on Metal Organic Vapor Phase Epitaxy
  • Place of Presentation: Pusan, Korea
  • Year and Date: 20120300
• [Presentation] (2012)
  • Author(s): 加賀充、山下浩司、森田隆敏、桑野侑香、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 20120300
• [Presentation] (2012)
  • Author(s): 桑野侑香、山下浩司、加賀充、矢木康太、森田隆敏、松井健城、竹内哲也、岩谷素顕、上山智、赤崎勇、天野浩
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 20120300
• [Presentation] (2011)
  • Author(s): 加賀充、山下浩司、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 20110800
• [Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果- (2013)
  • Author(s): 竹内哲也(分担)
  • Publisher: 株式会社エヌ・ティー・エス
• [Patent(Industrial Property Rights)] 窒化物半導体発光素子の製造方法、および窒化物半導体発光素子 (2014)
  • Inventor(s): 竹内哲也、桑野侑香、岩谷素顕、赤崎 勇
  • Industrial Property Rights Holder: 名城大学
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特願2014-035192
  • Filing Date: 2014-02-26
  • Overseas
• [Patent(Industrial Property Rights)] 電流狭窄を有する窒化物半導体発光素子とその製造方法 (2013)
  • Inventor(s): 竹内哲也、桑野侑香、岩谷素顕、上山 智、赤崎勇
  • Industrial Property Rights Holder: 名城大学
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特願2013-025361
  • Filing Date: 2013-02-13
  • Overseas
• [Patent(Industrial Property Rights)] 半導体発光素子アレイおよびその製造方法 (2013)
  • Inventor(s): 竹内哲也、渡邉雅大、岩谷素顕、赤崎 勇
  • Industrial Property Rights Holder: 名城大学
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特願2013-155760
  • Filing Date: 2013-07-26
  • Overseas