2013 Fiscal Year Final Research Report
Iron disilicide photochemical diode with Au-promoter
| Project/Area Number |
23560018
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kanagawa Industrial Technology Center |
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Principal Investigator |
AKIYAMA Kensuke 神奈川県産業技術センター, その他部局等, 研究員 (70426360)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 鉄シリサイド / 光化学ダイオード / 可視光 / 光触媒 |
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| Research Abstract |
Semiconducting iron disilicide (beta-FeSi2) has been attracting a great deal of attention as a photo-detector and Si-based light emitter operating at wavelengths suitable for optical fiber communications. This is because beta-FeSi2 has a band gap less than 0.80 eV and a very large optical absorption coefficient over 1E+5 /cm at 1 eV. Moreover, this semiconducting material is composed of the elements that are naturally abundant and less toxic than the elements used in conventional compound semiconductors.
In this report, we report on the novel fabrication method of beta-FeSi2 photochemical diode with Au electrode on the surface of Si powder by using metal-organic chemical vapor deposition (MOCVD) method which is general in semiconductor process technology. Moreover, we repot on the hydrogen evolution over this photochemical diode under irradiation of not only UV but also visible light from formaldehyde aqueous solution.
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