Large-area stacked silicon photonics based on amorphous Si

2014 Fiscal Year Final Research Report

• Project/Area Number: 23560036
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied optics/Quantum optical engineering
• Research Institution: University of Fukui
• Principal Investigator: KATSUYAMA TOSHIO 福井大学, 工学(系)研究科(研究院), 教授 (90467134)
• Co-Investigator(Kenkyū-buntansha): WADA Yasuo 東洋大学, 大学院学際・融合科学研究科, 教授 (50386736) ; AOKI Kanna 神戸大学, 自然科学系先端融合研究環重点研究部, 助教 (90332254)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Keywords: シリコンフォトニクス / アモルファス・シリコン / Si細線導波路 / フォトニック結晶 / ベータ鉄シリサイド

Outline of Final Research Achievements

We have studied optical devices based on amorphous Si (a-Si) in order to realize new large-area stacked structures composing silicon-based optical circuits. We have thus realized (1) an air-bridge-type a-Si slab structure with a large area (20 μm square), (2) a two-layered stacked optical circuit composed of an a-Si wire waveguide with an a-Si grating layer mediated by a SiO2 layer, and (3) a directional-coupler-type stacked light-emitting device composed of an a-Si wire waveguide with a β-FeSi2 light-emitting layer mediated by a SiO2 layer. As a result, it is shown that various stacked optical circuits can be realized by using a-Si material.

Free Research Field

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