2013 Fiscal Year Final Research Report
Study of the property of low-defect-density quantum dots for the purpose of developing high efficiency optical devices.
| Project/Area Number |
23560354
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hirosaki University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
TAWARA Takehiko NTT物性科学基礎研究所, 量子光物性研究部, 主任研究員 (40393798)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 量子ドット / サーファクタント / DLTS |
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| Research Abstract |
Quantum dots (QDs) have a potential to improve the performance of various semiconductor devices. We have reported a novel growth method for In(Ga)As QDs using bismuth (Bi) as a surfactant, and their superior optical qualities. For the purpose of clarifying the mechanism of appearing the excellent quality, we have evaluated the QDs mainly using DLTS (Deep Level Transient Spectroscopy) method. We have successfully observed the unique DLTS signals, which are caused by the emission of captured carriers, and revealed that the densities of traps caused by point defects or dislocations are very low in the QD samples.
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[Presentation] In(Ga)As積層量子ドット構造におけるキャリア注入/放出特性のDLTS評価2011
Author(s)
鈴木聡一郎, 佐藤真哉, 岩崎拓郎, 俵毅彦, 舘野功太, 後藤秀樹, 寒川哲臣, 岡本浩
Organizer
電子情報通信学会技術研究報告
Place of Presentation
弘前大学(vol.111, no.176, CPM2011-57, pp. 7-10)
Year and Date
20110800
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