Development of formation technology for nano spintronics device

2013 Fiscal Year Final Research Report

• Project/Area Number: 23560355
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tohoku University
• Principal Investigator: IKEDA Shoji 東北大学, 電気通信研究所, 准教授 (90281865)
• Project Period (FY): 2011 – 2013
• Keywords: 磁気トンネル接合

Research Abstract

A difference in the EB-resist pattern formation depending on the HMDS coating process was confirmed. By improvement of this process, formation of MTJ of less than 30 nm was enabled. Material research such as CoFeB/MgO stack and double MgO stack structures have been performed for realization of MTJ of less than 30 nm.

Research Products

• [Journal Article] Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer (2013)
  • Author(s): S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno
  • Journal Title: Journal of Applied Physics Volume: 113巻 Pages: 017C721-1-017C721-3
  • DOI: 10.1063/1.4798499
  • Peer Reviewed
• [Journal Article] Boron composition dependence of magnetic anisotropy and tunnel magnetoresistance in MgO/CoFe(B) based stack structures (2012)
  • Author(s): S. Ikeda , R. Koizumi , H. Sato , M. Yamanouchi , K. Miura, K. Mizunuma , H. D. Gan , F.Matsukura , and H. Ohno
  • Journal Title: IEEE Transactions on Magnetics Volume: 46巻 Pages: 3829-3832
  • DOI: 10.1109/TMAG.2012.2203588
  • Peer Reviewed
• [Journal Article] B Recent progress of perpendicular anisotropy magnetic tunnel junctions (2012)
  • Author(s): S. Ikeda, H. Sato, M. Yamanouchi, H. D. Gan, K.Miura, K. Mizunuma, S. Kanai, S. Fukami, F. Matsukura, and H. Ohno
  • Journal Title: SPIN Volume: 2巻 Pages: 1240003-1- 1240003-12
  • DOI: 10.1142/S2010324712400036
  • Peer Reviewed
• [Presentation] Top MgO layer thickness dependence of magnetic anisotropy in MgO/FeB/MgO stacks (2014)
  • Author(s): Y. Horikawa, S.Ishikawa, S. Ikeda, H. Sato, S. Fukami, M. Yamanouchi, F. Matsukura, and H. Ohno
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山大学
  • Year and Date: 2014-03-20
• [Presentation] MgO/Fe(B)/MgO積層膜の磁気特性 (2013)
  • Author(s): 堀川喜久, 石川慎也, 池田正二, 佐藤英夫, 山ノ内路彦, 深見俊輔, 松倉文礼, 大野英男
  • Organizer: 応用物理学会東北支部第68回学術講演会
  • Place of Presentation: 青山大学
  • Year and Date: 2013-12-06
• [Presentation] 不揮発性集積回路のための磁気トンネル接合の進展 (2013)
  • Author(s): 池田正二, 佐藤英夫, 山ノ内路彦, 石川慎也, 水沼広太朗, 金井駿, 深見俊輔, 松倉文礼, 笠井直記, 大野英男
  • Organizer: 半導体界面制御技術154委員会・薄膜131委員会合同研究会
  • Place of Presentation: キャンパスイノベーションセンター東京
  • Year and Date: 2013-01-18
  • Invited
• [Presentation] Magnetic anisotropy in CoFe(B)/MgO stack structures (2012)
  • Author(s): S. Ikeda, R. Koizumi, S. Ishikawa, H. Sato, M.Yamanouchi, K. Mizunuma, S. Kanai, F. Matsukura, H. Ohno
  • Organizer: The 2nd International conference of Asia Union of Magnetics Societies (ICAUMS 2012)
  • Place of Presentation: Nara prefectural New Public Hall
  • Year and Date: 20121002-05
• [Presentation] Perpendicular CoFeB-MgO magnetic tunnel junction (2012)
  • Author(s): S. Ikeda, M. Yamanouchi, H. Sato, K. Miura, H. D. Gan, K. Mizunuma, S. Fukami, S. Kanai, F. Matsukura, N. Kasai, and H. Ohno
  • Organizer: SPIE Nanoscience+Engineering 2012
  • Place of Presentation: San Diego Convention Center、USA
  • Year and Date: 20120812-16
  • Invited
• [Presentation] CoFeB composition dependence of magnetic anisotropy and tunnel magnetoresistance in CoFeB/MgO stack structures (2012)
  • Author(s): S. Ikeda, R. Koizumi, H. Sato, M. Yamanouchi, K. Miura, K. Mizunuma, H. D. Gan, F. Matsukura,and H. Ohno
  • Organizer: IEEE International Magnetic Conference (INTERMAG)
  • Place of Presentation: Vancouver Convention Center、Canada
  • Year and Date: 20120507-11
• [Presentation] スピントロニクスの基礎 (2012)
  • Author(s): 池田正二
  • Organizer: 新学術領域研究「超低速ミュオン顕微鏡が拓く物質・生命・素粒子科学のフロンティア」プレスクール「異分野理解を深めるために」
  • Place of Presentation: 北海道大学
  • Year and Date: 2012-08-29
  • Invited
• [Presentation] 不揮発性集積回路応用に向けたナノ微細磁気トンネル接合 (2012)
  • Author(s): 池田正二, 佐藤英夫, 山ノ内路彦, 三浦勝哉, 水沼広太朗, 金井駿, 松倉文礼, 大野英男
  • Organizer: 共同プロジェクトS研究会
  • Place of Presentation: 早稲田大学理工学部
  • Year and Date: 2012-07-13
• [Presentation] CoFeB/MgO積層構造における磁気特性のCoFeB組成依存性 (2012)
  • Author(s): 小泉遼平, 佐藤英夫, 山ノ内路彦, 池田正二, 松倉文礼, 大野英男
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-18
• [Presentation] 超薄膜を用いた垂直磁化型強磁性トンネル接合 (2012)
  • Author(s): 池田正二, 山ノ内路彦, 佐藤英夫, 甘華東, 小泉遼平, 三浦勝哉, 水沼広太朗, 金井駿, 松倉文礼, 大野英男
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-15
  • Invited
• [Presentation] B concentration dependence of magnetic anisotropy in MgO/CoFeB/Ta stack structure (2012)
  • Author(s): R. Koizumi, S. Ikeda, H. Sato, M. Yamanouchi, K. Miura, K. Mizunuma, H. D. Gan, F. Matsukura, and H. Ohno
  • Organizer: The 2nd CSIS International Symposium on Spintronics-based VLSIs
  • Place of Presentation: Tohoku University, Sendai
  • Year and Date: 2012-02-02
• [Book] 不揮発性集積回路のための磁気トンネル接合の進展 (2013)
  • Author(s): 池田正二, 佐藤英夫, 山ノ内路彦, 石川慎也, 水沼広太朗, 金井駿, 深見俊輔, 松倉文礼, 笠井直記, 大野英男
  • Total Pages: 41(9-15)
  • Publisher: 半導体界面制御技術154委員会・薄膜131委員会合同研究会資料
• [Patent(Industrial Property Rights)] 磁気抵抗効果素子及び磁気メモリ (2013)
  • Inventor(s): 池田正二, 佐藤英夫, 深見俊輔, 山ノ内路彦, 松倉文礼, 大野英男, 石川慎也
  • Industrial Property Rights Holder: 東北大学
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特願2013-219675
  • Filing Date: 2013-10-22
  • Overseas