2013 Fiscal Year Final Research Report
Development of evaluation method of crystallinity in poly-crystallized silicon thin film for bottom gate type TFT by surface photo-voltage
| Project/Area Number |
23560372
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nihon University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SHIMIZU Hirofumi 日本大学, 工学部, 教授 (10318371)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 表面光電圧 / 多結晶シリコン薄膜 / 薄膜トランジスタ / 結晶性評価 |
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| Research Abstract |
Evaluation method of crystallinity in poly-crystallized silicon thin film was investigated by alternative surface photo-voltage (AC SPV). Sensitive AC SPV measurement was achieved by the change of light source for carrier excitation from light-emitting diode (LED) to laser diode (LD). The ratio of AC SPV to radius of grain in poly-silicon thin film crystallized by excimer laser annealing was estimated about 1 mV/nm. Furthermore, it was shown that there is a problem of the saturation in AC SPV with high power light irradiation.
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