2013 Fiscal Year Final Research Report
Development of low damage high rate sputter-deposition process for the fabrication of OLED
| Project/Area Number |
23560374
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Polytechnic University |
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Principal Investigator |
HOSHI YOICHI 東京工芸大学, 工学部, 教授 (20108228)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 有機EL素子 / スパッタ成膜 / 低ダメージスパッタ / 電極膜 / 仕事関数 / 対向ターゲット式スパッタ / プラズマダメージ / 網電極 |
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| Research Abstract |
In the fabrication of an organic light emitting diode (OLED), the deposition of top electrode films by using the sputtering technique led to a significant increase in its operating voltage. Therefore, the development of a sputter-deposition process without such unwanted phenomena is greatly desired. In this work, we have proposed low damage facing target sputtering (FTS) method for the deposition of the top electrode films with significantly low levels of damage and tried to confirm the effectiveness of the sputter-deposition method. As a results, it was clarified that the low damage FTS was useful to improve the operating characteristics of the OLED, although a complete suppression of the incidence of high energy secondary electrons to the substrate was necessary. In addition, optimization of the sputtering conditions such as sputtering gas pressure and sputtering current were also effective to improve the operating characteristics of the OLED.
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