Hydrogen sensors using nitride-based semiconsuctor devices

2014 Fiscal Year Final Research Report

• Project/Area Number: 23560380
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: IROKAWA Yoshihiro 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (90394832)
• Co-Investigator(Renkei-kenkyūsha): NAKANO Yoshitaka 中部大学, 総合工学研究所 (60394722)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Keywords: 水素 / 窒化物半導体 / 界面

Outline of Final Research Achievements

The interaction of hydrogen with semiconductor devices has long been studied for applications in various semiconductor-based hydrogen sensors. Intensive research led to a model which attributes the reaction mechanism of the devices to hydrogen to the formation of a hydrogen-induced dipole layer at the metal-dielectric interface. Despite the existence of a considerable quantity of experimental data, however, there are still some debates as to the origin of the hydrogen sensitivity. In this research, it was found that hydrogen may not create electric double layer at the interface but change the property of the dielectric layers.

Free Research Field

半導体工学