酸化亜鉛透明トランジスタと積層式色分離型光電変換素子からなる光デバイスの創成

2013 Fiscal Year Annual Research Report

• Project/Area Number: 23560408
• Research Institution: Kochi University of Technology
• Principal Investigator: 古田 守 高知工科大学, 工学部, 教授 (20412439)
• Co-Investigator(Kenkyū-buntansha): 浦岡 行治 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (20314536) ; 木村 睦 龍谷大学, 理工学部, 教授 (60368032)
• Keywords: 先端機能デバイス / 電子・電気材料 / 半導体物性 / イメージセンサー / 酸化物半導体 / 薄膜トランジスタ / デバイスシミュレーション

Research Abstract

最終年度は、1)酸化物半導体薄膜トランジスタにおいて最大課題となっている光照射下で負ゲート電圧ストレス印加時の信頼性劣化メカニズムの解明と対策、2)前記要因となっている価電子帯近傍の欠陥準位の不活性化処理、に重点的に取り組んだ。
劣化メカニズム解析では、これまでのゲート電圧ストレスに加え、ドレイン電圧によりトランジスタチャネル内に横方向電界を印加する新たな評価方法を考案・実施した結果、正帯電した欠陥が横方向電界に反応して移動すること、この正帯電した欠陥が劣化の主要因であること、劣化は正帯電した欠陥のチャネル内での寿命（ライフタイム）に依存するため電子との再結合で劣化を抑制できること、を始めて明らかにし論文化した。また、この正帯電した深い欠陥準位のフッ素終端（不活性化処理）を検討し、フッ素を多く含む窒化シリコン(SiN:F)からの熱処理によるフッ素拡散を用い、チャネルとの間にフッ素濃度制御を目的とした緩衝層（絶縁膜）を挿入することで良好な結果が得られることを実証した。
期間全体を通じ、メカニズム解析や対策といった学術的意義のある研究成果に加えて当初目標［可視光(λ≧400nm, 0.2 mW/cm2)照射におけるリーク電流値1 pA/μm以下の透明トランジスタ］を達成した。
機能モデル実証に関しても、NHK放送技術研究所のご協力を得て、当初目標である解像度5万画素に対応可能な設計にて積層式色分離型撮像素子の画像表示に成功した。加えて、低温(150℃)プロセスによる透明回路を有機光電膜に直接積層した二層撮像素子の実証を行い、当初想定を超える成果も得た。
以上のように、科研費の支援により、当初目標を全て達成すると同時に、積層式色分離型撮像素子のモデル実証にも成功した。また、成果公表にも注力した結果、査読論文数、国際・国内会議発表件数、とも当初計画を大幅に上回る実績を残した。

Research Products

• [Journal Article] Suppression of degradation induced by negative gate bias and illumination stress in amorphous InGaZnO thin-film transistor by applying negative drain bias (2014)
  • Author(s): D. Wang, M. Furuta, 他計5名(5番)
  • Journal Title: ACS applied Materials and Interfaces Volume: 6 Pages: 5713-5718
  • DOI: 10.1021/am500300g
  • Peer Reviewed
• [Journal Article] Negative bias illumination stress induced electron trapping at back-channel interface of InGaZnO thin-film transistor (2014)
  • Author(s): M. P. Hung, M. Furuta, 他計4名(4番)
  • Journal Title: Electrochemical and Solid-State Letters Volume: 3(3) Pages: Q13-Q16
  • DOI: 10.1149/2.010403ssl
  • Peer Reviewed
• [Journal Article] Ultrasonic-assisted mist chemical vapor deposition of II-oxide and related oxide compounds (2014)
  • Author(s): Shizuo Fujita, Kentaro Kaneko, Takumi Ikenoue, Toshiyuki Kawaharamura and Mamoru Furuta
  • Journal Title: Physica status solidi (c) Volume: 未定 Pages: 未定
  • DOI: DOI: 10.1002/pssc.201300655
  • Peer Reviewed
• [Journal Article] Effect of drain bias on negative gate bias and illumination stress induced degradation in amorphous InGaZnO thin-film transistors (2014)
  • Author(s): D. Wang, M.-P. Hung, J. Jiang, T. Toda, C. Li, and M. Furuta
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Pages: 03CC01-1~4
  • DOI: doi:10.7567/JJAP.53.03CC01
  • Peer Reviewed
• [Journal Article] Low temperature deposition of SiOx insulator film with newly developed facing electrodes chemical vapor deposition (2014)
  • Author(s): T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, T. Kawaharamura, and T. Hirao
  • Journal Title: Vacuum Volume: 101 Pages: 189-192
  • DOI: 10.1016/j.vacuum.2013.08.003
  • Peer Reviewed
• [Journal Article] Influence of Substrates on Formation of Zinc Oxide Nanostructures by a Novel Reducing Annealing Method (2014)
  • Author(s): X. Li, C. Li, T. Kawaharamura, D. Wang, N. Nitta, M. Furuta, H. Furuta, and A. Hatta
  • Journal Title: Nanoscience and Nanotechnology Letters Volume: 6 Pages: 174-180
  • DOI: DOI: http://dx.doi.org/10.1166/nnl.2014.1708
  • Peer Reviewed
• [Journal Article] Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect (2013)
  • Author(s): S. Urakawa, M. Furuta, Y. Uraoka, 他計11名(8番)
  • Journal Title: Applie Physics letters Volume: 102 Pages: 53506-1~3
  • DOI: 10.1063/1.4790619
  • Peer Reviewed
• [Journal Article] The deterioration phenomenon of amorphous InSnZnO transistors derivered from the process of annealing (2013)
  • Author(s): S. Tomai, M. Furuta, 他計10名(10番)
  • Journal Title: Electrochemical and Solid-State Letters Volume: 2(12) Pages: P107-P109
  • DOI: 10.1149/2.003312ssl
  • Peer Reviewed
• [Journal Article] Thermal distribution in amorphous InSnZnO thin-film transistor (2013)
  • Author(s): S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Horita, Y. Ishikawa, and Y. Uraoka
  • Journal Title: Physica status solidi (c) Volume: 10 Pages: 1561-1564
  • DOI: DOI: 10.1002/pssc.201300253
  • Peer Reviewed
• [Journal Article] Enhancing carrier mobility of IGZO TFT fabricated by non-vacuum mist CVD with O3 assistance (2013)
  • Author(s): T. Kawaharamura, T. Uchida, M. Sanada, and M. Furuta
  • Journal Title: Physica status solidi (c) Volume: 10 Pages: 1565-1568
  • DOI: DOI: 10.1002/pssc.201300247
  • Peer Reviewed
• [Journal Article] Thin-Film Transistors Using Uniform and Well-Aligned Single-Walled Carbon Nanotubes Channels by Dielectrophoretic Assembly (2013)
  • Author(s): T. Toda, H. Furusawa, and M. Furuta
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Pages: 03BB09-1~5
  • DOI: DOI: 10.7567/JJAP.52.03BB09
  • Peer Reviewed
• [Journal Article] Trap Densities in ZnO TFTs with SiNx/SiOx Stacked Gate Insulators Fabricated Using Several N2O Flow Rate during SiOx Deposition (2013)
  • Author(s): Mutsumi Kimura, Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Chaoyang Li, Takashi Hirao, Yudai Kamada, and Shizuo Fujita
  • Journal Title: ECS Transaction Volume: 54 (1) Pages: 121-126
  • DOI: doi: 10.1149/05401.0121ecst
  • Peer Reviewed
• [Journal Article] (Invited) Negative-Bias with Illumination Stress Induced State Creation in Amorphous InGaZnO Thin-Film Transistor (2013)
  • Author(s): M. Furuta, M. P. Hung, J. Jiang, D. Wang, S. Tomai, H. Hayasaka, amd K. Yano
  • Journal Title: ECS Transaction Volume: 54 (1) Pages: 127-134
  • DOI: doi: 10.1149/05401.0127ecst
  • Peer Reviewed
• [Journal Article] Thin-Film Transistors Using Dielectrophoretic Assembly of Single-Walled Carbon Nanotubes (2013)
  • Author(s): T. Toda, T. Kawaharamura, H. Furusawa, and M. Furuta
  • Journal Title: ECS Transaction Volume: 50 (8) Pages: 223-228
  • DOI: doi: 10.1149/05008.0223ecst
  • Peer Reviewed
• [Journal Article] A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack (2013)
  • Author(s): M. Furuta, T. Kawaharamura, T. Toda, and D. Wang
  • Journal Title: ECS Transaction Volume: 50 (8) Pages: 95-100
  • DOI: doi: 10.1149/05008.0095ecst
  • Peer Reviewed
• [Journal Article] Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering (2013)
  • Author(s): C. Li, D. Wang, Z. Li, X. Li, T. Kawaharamura, and M. Furuta
  • Journal Title: Journal of Materials Volume: 2013 Pages: 1-6
  • Peer Reviewed
• [Journal Article] ミストCVD法によるAlOx薄膜作製に対するO3支援の効果 (2013)
  • Author(s): 内田貴之, 川原村敏幸, 古田守, 眞田克
  • Journal Title: 日本材料学会誌 Volume: 62 Pages: 663-667
• [Journal Article] High performance solution-processed InGaZnO thin-film Transistor fabricated by ozone-assisted atmospheric pressure mist deposition
  • Author(s): M. Furuta, 他計5名(1番)
  • Journal Title: Journal of Display Technology (IEEE) Volume: (in-press)
  • DOI: 10.1109/JDT.2013.2294967
  • Peer Reviewed
• [Presentation] High Mobility Atmospheric-Pressure-Processed IGZO TFT with AlOx/IGZO Stack Fabricated by Mist Chemical Vapor Deposition (2013)
  • Author(s): M. Furuta, T. Kawaharamura, T. Kaida, and D. Wang
  • Organizer: The 20th International Display Workshops (IDW’13)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 20131204-20131206
• [Presentation] Single Crystalline ZnO Nanorods Fabricated by Mist Chemical Vapor Deposition for Optical Applications (2013)
  • Author(s): C. Li, X. Li, D. Wang, T. Kawaharamura, M. Furuta, and A. Hatta
  • Organizer: The 20th International Display Workshops (IDW’13)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 20131204-20131206
• [Presentation] Influence of Charge Trapping on Hysteresis of InGaZnO Thin-Film Transistors under Negative Bias and Illumination Stress (2013)
  • Author(s): M. P. Hung, D. Wang, J. Jiang, and M. Furuta
  • Organizer: The 20th International Display Workshops (IDW’13)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 20131204-20131206
• [Presentation] Reaction Mechanism for Fabrication of High Quality IGZO Thin Films Grown by Non-Vacuum Mist CVD with O3 Assistance (2013)
  • Author(s): T. Kawaharamura, T. Kaida, and M. Furuta
  • Organizer: 2013 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, MA, USA
  • Year and Date: 20131201-20131206
• [Presentation] ZnSnO薄膜トランジスタにおけるMgOドーピング効果 (2013)
  • Author(s): 竹之内良太, 王大鵬, 石井林太郎, 高橋広己, 久保田高史, 古田守
  • Organizer: 第9回薄膜材料デバイス研究集会
  • Place of Presentation: 龍谷大学アバンティ響都ホール(京都)
  • Year and Date: 20131101-20131103
• [Presentation] オゾン支援ミストCVD法による高移動度(>10cme/Vs)IGZO TFT～TFT特性のチャネル組成依存性～ (2013)
  • Author(s): 介田忠宏, 川原村敏幸, 古田守
  • Organizer: 第9回薄膜材料デバイス研究集会
  • Place of Presentation: 龍谷大学アバンティ響都ホール(京都)
  • Year and Date: 20131101-20131103
• [Presentation] High-performance oxide thin-film transistors fabricated using atmospheric pressure deposition method (2013)
  • Author(s): M. Furuta, T. Kawaharamura
  • Organizer: International Conference on Advanced Materials (IUMRS-ICAM2013)
  • Place of Presentation: Qingdao, China.
  • Year and Date: 20130922-20130928
  • Invited
• [Presentation] Effect of Active Layer Thickness on Negative Bias and Illumination Stress Induced Degradation in Amorphous InGaZnO Thin-Film Transistors (2013)
  • Author(s): D. Wang, J. Jiang, M. P. Hung, T. Toda, C. Li, and M. Furuta
  • Organizer: International Conference on Advanced Materials (IUMRS-ICAM2013)
  • Place of Presentation: Qingdao, China.
  • Year and Date: 20130922-20130928
• [Presentation] Developing a Novel Hybrid Method for Fabricating Well-aligned Zinc Oxide Nanorod (2013)
  • Author(s): X. Li, E. Pradeep, T. Kawaharamura, D. Wang, A. Hatta, M. Furuta, and C. Li
  • Organizer: International Conference on Advanced Materials (IUMRS-ICAM2013)
  • Place of Presentation: Qingdao, China.
  • Year and Date: 20130922-20130928
• [Presentation] バックチャネル欠陥準位がa-InGaZnO薄膜トランジスタ特性及び信頼性に与える影響 (2013)
  • Author(s): 戸田達也，Dapeng Wang，Jingxin Jiang，Phi Hung Mai，古田守
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京都）
  • Year and Date: 20130916-20130920
• [Presentation] 酸化物薄膜トランジスタにおける発熱効果および劣化現象のサイズ依存性 (2013)
  • Author(s): 浦川哲，笘井重和，笠見雅司，矢野公規，Wang Dapeng，古田守，堀田昌宏，石河泰明，浦岡行治
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京都）
  • Year and Date: 20130916-20130920
• [Presentation] Investigation of Degradation Mechanism in Amorphous InGaZnO Thin-Film Transistors under Negative Bias and Illumination Stress by Simulation (2013)
  • Author(s): D. Wang, J. Jiang, M. P. Hung, T. Toda, C. Li, and M. Furuta
  • Organizer: The 13th International Meeting on Information Display (IMID 2013)
  • Place of Presentation: Daegu, Republic of Korea
  • Year and Date: 20130826-20130829
• [Presentation] High Mobility IGZO TFT fabricated by Solution-Based Non-Vacuum Mist Chemical Vapor Deposition (2013)
  • Author(s): T. Kawaharamura and M. Furuta
  • Organizer: 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
  • Place of Presentation: Villard-de-Lans (Grenoble area), France
  • Year and Date: 20130708-20130711
• [Presentation] Negative-Bias with Illumination Stress Induced State Creation in a-InGaZnO TFT (2013)
  • Author(s): M. Furuta, M. P. Hung, J. Jiang, D. Wang, S. Tomai, H. Hayasaka, K. Yano
  • Organizer: 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
  • Place of Presentation: Villard-de-Lans (Grenoble area), France
  • Year and Date: 20130708-20130711
  • Invited
• [Presentation] Effect of Drain Bias on Negative Gate Bias and Illumination Stress Induced Degradation in Amorphous InGaZnO Thin-Film Transistors (2013)
  • Author(s): D. Wang, M. P. Hung, J. Jiang, C. Li, and M. Furuta
  • Organizer: The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 13)
  • Place of Presentation: Kyoto, Japan.
  • Year and Date: 20130702-20130705
• [Presentation] Fabrication of High Conductive ITO Thin Film for Photovoltaic Applications (2013)
  • Author(s): X. Li, C. Li, D. Wang, C. Pradeep, M. Furuta, and A. Hatta
  • Organizer: The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 13)
  • Place of Presentation: Kyoto, Japan.
  • Year and Date: 20130702-20130705
• [Presentation] Thermal Degradation and Theoretical Analysisof Amorphous Oxide Thin-Film Transistor (2013)
  • Author(s): S. Urakawa, S. Tomai, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Kimura, M. Horita, Y. Ishikawa, and Y. Uraoka
  • Organizer: The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 13)
  • Place of Presentation: Kyoto, Japan.
  • Year and Date: 20130702-20130705
• [Presentation] Atmospheric Pressure Processed InGaZnO Thin-Film Transistors (2013)
  • Author(s): M. Furuta, T. Kawaharamura
  • Organizer: International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  • Place of Presentation: Osaka, Japan
  • Year and Date: 20130606-20130607
  • Invited
• [Presentation] Morphology Controlled Single-crystal ZnO Nanostructures Fabricated by a Novel Mist Chemical Vapor Deposition (2013)
  • Author(s): C. Li, X. Li, D. Wang, T. Kawaharamura, N. Nitta, M. Furuta, and A. Hatta
  • Organizer: Society for Information Display (SID2013)
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 20130519-20130524
• [Presentation] Trap States in Amorphous In-Sn-Zn-O Thin-Film Transistors Analyzed Using Dependence on Channel Thickness (2013)
  • Author(s): T. Matsuda, M. Kimura, J. Jiang, D. Wang, M. Furuta, M. Kasami, S. Tomai, and K. Yano
  • Organizer: Society for Information Display (SID2013)
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 20130519-20130524
• [Presentation] Enhancing carrier mobility of IGZO TFT fabricated by Mist CVD with O3 assistance (2013)
  • Author(s): T. Kawaharamura, T. Uchida, D. Wang, M. Sanada, and M. Furuta
  • Organizer: The 40th International Symposium on Compound Semiconductors (ISCS 2013)
  • Place of Presentation: Kobe, Japan
  • Year and Date: 20130519-20130523
• [Presentation] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor (2013)
  • Author(s): S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Horita, Y. Ishikawa, and Y. Uraoka
  • Organizer: The 40th International Symposium on Compound Semiconductors (ISCS 2013)
  • Place of Presentation: Kobe, Japan
  • Year and Date: 20130519-20130523
• [Book] 月刊ディスプレイ 2013年10月号 (2013)
  • Author(s): 古田 守、川原村 敏幸
  • Total Pages: p.17～22
  • Publisher: (株)テクノタイムズ社
• [Remarks] 高知工科大学 古田研究室ホームページ
  • URL: http://www.env.kochi-tech.ac.jp/m-furuta/
• [Remarks] 研究紹介（積層式色分離型イメージセンサ）
  • URL: http://www.env.kochi-tech.ac.jp/m-furuta/research01.html