2013 Fiscal Year Final Research Report
Zinc oxide transparent transistor and its application to stacked image sensor
| Project/Area Number |
23560408
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kochi University of Technology |
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Principal Investigator |
FURUTA MAMORU 高知工科大学, 工学部, 教授 (20412439)
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| Co-Investigator(Kenkyū-buntansha) |
URAOKA Yukiharu 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (20314536)
KIMURA Mutsumi 龍谷大学, 理工学部, 教授 (60368032)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 先端機能デバイス / 電子・電気材料 / 半導体物性 / 酸化物半導体 / 透明回路 / イメージセンサ |
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| Research Abstract |
The aim of this research is to achieve transparent thin-film transistor by using wide-gap oxide semiconductors. Based on the analysis of the influence of lattice defects existing in an oxide semiconductor bulk and at an interface between insulator and oxide semiconductor on electrical properties and reliability of the transistor, we investigated the defect passivation method of oxide semiconductors.
As a consequence of this research, transparent thin-film transistor, which was not influenced by visible light irradiation, could be achieved, and the stacked organic image sensor has been successively demonstrated with transparent signal readout circuits.
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