2013 Fiscal Year Final Research Report

Stabilization of SRAM according to fluctuation of transistor characteristics

Research Project

Project/Area Number	23560423
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Multi-year Fund
Section	一般
Research Field	Electron device/Electronic equipment
Research Institution	Osaka Institute of Technology
Principal Investigator	MAKINO Hiroshi 大阪工業大学, 情報科学部, 教授 (50454038)
Project Period (FY)	2011 – 2013
Keywords	電子デバイス / 集積回路 / SRAM / しきい値電圧 / ばらつき / 動作安定化 / スピードセンサ / 電圧発生器
Research Abstract	Against the problem that the SRAM fails to function because of the fluctuation of the threshold voltage of transistors, a method of securing SRAM is established. This method consists of two steps, firstly detecting the processed threshold voltage, and next, giving the optimum supply voltage to the SRAM according to the detected threshold voltage. This method enables to secure SRAMs which do not operate under the standard condition. To realize the method, a new detecting technique of the processed threshold voltage is proposed and the table showing the relation between the threshold voltage and the optimum supply voltage is developed. Finally, the whole SRAM circuit is designed and simulated. The simulation result shows that the proposed method is effective to improve the operation yield of SRAM.