2013 Fiscal Year Annual Research Report
高密度フラッシュメモリシステムに適した信号処理・符号化方式の開発
| Project/Area Number |
23560439
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
KURKOSKI Brian 北陸先端科学技術大学院大学, 情報科学研究科, 准教授 (80444123)
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| Co-Investigator(Kenkyū-buntansha) |
和田山 正 名古屋工業大学, 工学(系)研究科(研究院), 教授 (20275374)
鎌部 浩 岐阜大学, 工学部, 教授 (80169614)
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| Keywords | フラッシュメモリ / 誤り訂正符号 / フローティング符号 / WOM符号 / 信号処理 / 国際研究者交流 |
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| Research Abstract |
Several new coding methods to increase the reliability of flash memory systems were obtained; five major results are described here. (1) Multi-level flash memory can be viewed as a coded-modulated system, and lattices were combined with Reed-Solomon error-correcting codes. This gave a significant gain over current flash memory systems, and was published in IEEE Journal on Selected Areas in Communications (IEEE JSAC).
(2) Write once memory (WOM) codes are a coding theoretic method to increase the longevity of flash memories. New lattice-based WOM codes for multilevel flash memories were described. The new codes approach the theoretical capacity, when the number of levels goes to infinity; this was published in a separate IEEE JSAC article.
(3) There is a tight connection between WOM codes and the interference channel (particularly dirty paper coding). A scheme which takes advantage of dirty paper coding to design multi-level WOM codes was given, and was presented at IEEE ICC in Budapest, Hungary.
(4) New binary WOM codes which also correct errors was given. This new construction has a higher coding rate than the existing method, and was presented at IEEE International Symposium on Information Theory in Istanbul, Turkey. (5) A powerful technique to optimally quantize channels will be published in IEEE Transactions on Information Theory (later in 2014).
Also, in May 2013, the "Workshop on Coding for Flash Memories" was held in Fukui-ken, Awara-shi, which gathered Japanese and international researchers to fruitfully discuss research and disseminate ideas.
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