2013 Fiscal Year Final Research Report
Fabrication of Conductive Quantum Wire by using Dislocation Array
| Project/Area Number |
23560817
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Composite materials/Physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
SAITO Mitsuhiro 東北大学, 原子分子材料科学高等研究機構, 助教 (00510546)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 量子細線 / 電子顕微鏡 / 転位 / 結晶界面 |
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| Research Abstract |
In this work, a conductive quantum wire was fabricated by using high-temperature segregation behavior of a metallic dopant along a dislocation core in an insulating MgO bicrystal grain boundary (GB) and then was characterized by a scanning TEM (STEM) and a first-principle calculation. The STEM image and electron energy loss spectrum (EELS) mapping showed that a structure unit in the MgO GB is formed to compensate lattice mismatch and calcium (Ca) and titanium (Ti) impurities are strongly localized in the GB. The first-principle calculation revealed that the segregated Ti atoms form conductive channels along the GB suggesting semi-conductor like behavior. By using self-segregation behavior along a dislocation core, we demonstrated to fabricate a low dimensional quantum structure with a specific electronic property in an insulating solid crystal.
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