2013 Fiscal Year Final Research Report
Development of Crystalline Anisotropic Plasma Etching for Single Crystal Silicon
| Project/Area Number |
23651139
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Kagawa University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
OOHIRA Fumikazu 香川大学, 工学部, 准教授 (80325315)
SHIMOKAWA Fusao 香川大学, 工学部, 准教授 (90580598)
TAKAO Hidekuni 香川大学, 工学部, 准教授 (40314091)
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| Project Period (FY) |
2011 – 2012
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| Keywords | マイクロファブリケーション / 単結晶シリコン / ドライエッチング / 結晶異方性 / カンチレバー |
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| Research Abstract |
In this study, we propose a novel fabrication process for complicated three-dimensional silicon microstructures using the crystalline anisotropic plasma etching of the single crystal silicon with an ordinary RIE process under the normal temperature. The proposed process combined of the conventional isotropic, the conventional vertical anisotropic, and the crystalline anisotropic silicon plasma etchings achieves the complicated microstructures under all dry process with single RIE machine with single mask. To confirm the validity of the proposed process, we demonstrated to fabricate a cantilever and a micro needle for bio-application. In the case of the cantilever, the cantilever released from a substrate was fabricated at 1/5 processing time of the conventional process. It is possible that the complicated three-dimensional silicon microstructures are fabricated in single dry etching equipment.
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Research Products
(12 results)
