2012 Fiscal Year Final Research Report
Making of Dirac Fermion Systems using Semiconductor Superstructures
| Project/Area Number |
23654100
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Condensed matter physics I
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Keywords | メゾスコピック系 / 局在ディラック電子系 |
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| Research Abstract |
The purpose of this research was to realize the 2D massless Dirac fermion system in the semiconductor lateral superlattice structure. As the first step, we have tried to realize the2D Bloch electron system with the reconstructed mini-band structure. We prepared the GaAs/AlGaAs FET devices with the laterally modulated gate electrode. The array of holes are fabricated on the ZEP gate insulating layer with the typical period of 60-80nm. The experimental results have not shown the sign of the band-reconstruction. The randomness of the array is an issue in the feature.
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Research Products
(19 results)
