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2011 Fiscal Year Final Research Report

Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy

Research Project

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Project/Area Number 23656015
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Applied materials science/Crystal engineering
Research InstitutionNagoya University

Principal Investigator

AMANO Hiroshi  名古屋大学, 工学研究科, 教授 (60202694)

Co-Investigator(Kenkyū-buntansha) YAMAGUCHI Mashito  名古屋大学, 工学研究科, 准教授 (20273261)
HONDA Yoshio  名古屋大学, 工学研究科, 助教 (60362274)
Project Period (FY) 2011
KeywordsPAMBE / InGaN / 窒素ラジカル / LED / 太陽電池
Research Abstract

Growth of high In content thick InGaN layers and InGaN nanowires were conducted by plasma assisted molecular beam epitaxy. InGaN/GaN superlattice structures are found to be very effective to realize low-defect-density high-In-content InGaN. PL intensity of InGaN nanowires is strongly affected by the density of basal stacking faults. It is possible to reduce stacking fault density by growing high In content InGaN nanowires at high growth temperature and high In flux ratio.

  • Research Products

    (1 results)

All 2011

All Journal Article (1 results)

  • [Journal Article] Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy2011

    • Author(s)
      Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano
    • Journal Title

      Applied Physics Letters

      Volume: 98 Pages: 14905-1/3

    • URL

      http://dx.doi.org/10.1063/1.3574607

URL: 

Published: 2013-07-31  

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