2013 Fiscal Year Final Research Report
Nano-mechanical investigation of the effects of mechanical strain on semiconductor devices
| Project/Area Number |
23656083
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Kagoshima University (2012-2013)
Kyoto University (2011) |
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Principal Investigator |
IKEDA Toru 鹿児島大学, 理工学研究科, 教授 (40243894)
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| Co-Investigator(Renkei-kenkyūsha) |
KOGANEMARU Masaaki 福岡県産業, 科学技術振興財団 (20416506)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 材料設計 / プロセス / 物性 / 評価 / ひずみ効果 / 半導体 |
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| Research Abstract |
This study discusses a numerical model for analyzing the effects of mechanical stress on semiconductor devices. In other words, drift-diffusion device simulation is conducted using a physical model incorporating the effects of mechanical stress. Then, each impact of the stress-induced physical phenomena is analyzed. In our previous study, three physical phenomena that were attributed to mechanical stress have been modeled in our electron mobility model, i.e., the changes in relative population, the momentum relaxation time and the effective mass of electrons in conduction-band valleys. In this study, the stress-induced change of intrinsic carrier density is modeled. Stress-induce variations of drain current characteristics on nMOSFETs are evaluated using a drift-diffusion device simulator including above mentioned physical models. It is demonstrated that the impact of stress-induced change of intrinsic carrier density is small for our evaluated nMOSFETs.
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[Journal Article] SEM-DICMによる3次元積層チップの熱ひずみ計測に基づく非線形有限要素解析精度の評価・改善2013
Author(s)
岡大智, 池田徹, 宮 崎 則 幸, 田 中 宏 之, 畑尾卓也, 松本圭司, 小原さゆり, 折井靖光, 山田文明, 嘉田守宏
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Journal Title
電子情報通信学会論文誌
Volume: Vol.J96-C, No.11
Pages: 352-360
Peer Reviewed
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