2012 Fiscal Year Final Research Report

Development of new microprocessing technology of silicon crystalline substrate: internal, three-dimensional, arbitrary-shape removal processing

Research Project

Project/Area Number	23656109
Research Category	Grant-in-Aid for Challenging Exploratory Research
Allocation Type	Multi-year Fund
Research Field	Production engineering/Processing studies
Research Institution	The University of Tokushima
Principal Investigator	MATSUO Shigeki 徳島大学, 大学院・ソシオテクノサイエンス研究部, 准教授 (20294720)
Co-Investigator(Kenkyū-buntansha)	NAOI Yoshiki 徳島大学, 大学院・ソシオテクノサイエンス研究部, 教授 (90253228)
Project Period (FY)	2011 – 2012
Keywords	シリコン / フェムト秒レーザー / 赤外パルス / エッチング / フッ硝酸
Research Abstract	We have been developing an internal, three-dimensional, arbitrary-shape removal processing technique for transparent solid substrates. The technique consists of two-step: irradiation focused ultrashort laser pulses and chemical etching. In this research, we tried to apply this technique to silicon, which is opaque in visible but transparent in infrared wavelength longer than about 1.1 μm. We examined several kinds of etchant, and found that selective etching occurs on the back surface when nitric hydrofluoric acid was used as etchant.

(2 results)