2013 Fiscal Year Final Research Report
Bipolar resistance switching in magnetic films for the memristive device application
| Project/Area Number |
23656215
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka Electro-Communication University (2013)
Kyoto University (2011-2012) |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2013
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| Keywords | メモリスター / 抵抗スイッチング / ReRAM / マンガン酸化物 / ペロブスカイト / 電気化学インピーダンス法 / 分光エリプソメトリー / プラズマ還元 |
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| Research Abstract |
Recently, bipolar resistance switching of metal oxide has been identified as being physical examples of memristors and/or memristive devices. The underlying mechanism of the memristive switching behavior is still poorly understood, although there have been various proposed models of the resistance switching mechanism. The comprehensive understanding for the origin of the memristive switching is required to meet the requirement for the next-generation memristive device application. In this work, the mechanism of bipolar resistance switching was investigated in perovskite manganite films for memristive devices. Impedance spectroscopic measurements indicated that the interface resistance significantly depends on the dopant concentration in the film. The correlation between dielectric function and resistance switching behavior was found by spectroscopic ellipsometry. The voltage required for resistance switching was reduced by plasma-assisted reduction of the film surface.
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