2012 Fiscal Year Final Research Report
A STUDY OF LIGHT-EMITTING DEVICES WITH AN ULTRATHIN SILICON/SILICON DIOXIDE TWO-DIMENSIONAL QUANTUM STRUCTURE
| Project/Area Number |
23656217
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
MORITA Mizuho 大阪大学, 大学院・工学研究科, 教授 (50157905)
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| Project Period (FY) |
2011 – 2012
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| Keywords | シリコン / シリコン酸化膜 / 発光デバイス / 量子井戸 / トンネル現象 |
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| Research Abstract |
An electroluminescence peak at energies higher than the band gap of bulk silicon has been observed in metal-oxide-semiconductor tunnel devices with an ultrathin silicon layer. This indicates that the peak is due to subband -mediated transitions and due to trap-mediated transitions. It has been found that the external quantum efficiency increases with the decrease of the silicon layer thickness. This suggests that ultrathin silicon layers have quasi-direct band gap.
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