2012 Fiscal Year Final Research Report
Development of terahertz emitters and detectors using rare-earth-doped semiconductors
| Project/Area Number |
23656220
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
TERAI Yoshikazu 鹿児島大学, 大学院・理工学研究科, 准教授 (90360049)
NISHIKAWA Atsushi 大阪大学, 大学院・工学研究科, 助教 (60417095)
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| Project Period (FY) |
2011 – 2012
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| Keywords | 希土類添加半導体 / テラヘルツ波 |
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| Research Abstract |
We have investigated the properties of terahertz emitters and detectors using Er,O-codoped GaAs (GaAs:Er,O) which exhibits ultrafast carrier relaxation at room temperature. Under the irradiation of the light from a femto-second laser, we succeeded in the observation of terahertz emission. The amplitude of the emission increased with the excitation power, followed by the successive saturation. The amplitude was enhanced in an emitter with a multi-layer structure,. Terahertz emission was also detected successfully using GaAs:Er,O.
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