2012 Fiscal Year Final Research Report
Development of MT-FET for chemical sensor with molecular wire
| Project/Area Number |
23656244
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kyushu University |
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Principal Investigator |
HAYASHI Kenshi 九州大学, システム情報科学研究院, 教授 (50202263)
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| Project Period (FY) |
2011 – 2012
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| Keywords | 有機エレクトロニクス / 有機 FET / センサ / モット転移 / 金ナノ粒子 / ナノギャップ |
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| Research Abstract |
Low dimensional conductive layers composed of organic material (P3HT or pentacene with a few 10 nm thickness coupled with molecular recognizing materials), which could exhibit switching properties by external chemicals based on mechanisms as Mott-transition, were fabricated for organic FET for chemical sensor devices. As a result, FET properties were changed by gas application, and sensor response can be altered by addition of molecular recognition layers. Furthermore, it wan confirmed that response mechanism of low dimensional conductive layer to chemical substances was examined with nanogap electrode bridged by gold nanoparticles having a surface modification layer.
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