Basic studies for magnetic functional silicon devices utilizing highly dislocated structures

2013 Fiscal Year Final Research Report

• Project/Area Number: 23656380
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Physical properties of metals
• Research Institution: Tohoku University
• Principal Investigator: YONENAGA Ichiro 東北大学, 金属材料研究所, 教授 (20134041)
• Co-Investigator(Kenkyū-buntansha): OHNO Yutaka 東北大学, 金属材料研究所, 准教授 (80243129) ; TOKUMOTO Yuki 東北大学, 金属材料研究所, 助教 (20546866)
• Project Period (FY): 2011 – 2012
• Keywords: 半導体物性 / 転位ナノ物性 / 物性制御 / 金属不純物

Research Abstract

Development of nano-clusters with ferromagnetic impurities along a dislocation in silicon was attempted in order to explore a new magnetic device according to the established knowledge of defect-impurity interaction in semiconductors. MnSi1.75 layers with a thickness of about 1 micron were formed in the surface region of heavily-dislocated Si.

Research Products

• [Journal Article] Czochralski growth of heavily tin-doped Si crystals (2014)
  • Author(s): I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto and Y. Ohno
  • Journal Title: J. Crystal Growth Volume: 395 Pages: 94-97
  • Peer Reviewed
• [Journal Article] Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements (2014)
  • Author(s): K. Inoue, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, T. Ohsawa, R. Gotoh and I. Yonenaga
  • Journal Title: J. Crystal Growth Volume: 393 Pages: 45-48
  • Peer Reviewed
• [Journal Article] Dislocation activities in Si under high-magnetic-field (2013)
  • Author(s): I. Yonenaga, Y. Ohno, Y. Tokumoto and K. Kutsukake
  • Journal Title: Proceedings of 4th International Conference on Fundamental Properties of Dislocations Pages: 29-32
  • Peer Reviewed
• [Journal Article] Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy (2013)
  • Author(s): Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, K. Inoue, Y. Nagai, H. Yoshida and S. Takeda
  • Journal Title: Appl. Phys. Lett Volume: 103 Pages: 102102(1-4)
  • Peer Reviewed
• [Journal Article] Growth of Heavily Indium doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium (2012)
  • Author(s): K. Inoue, Y. Tokumoto, K. Kutsukake, Y. Ohno and I. Yonenaga
  • Journal Title: Key Engineering Materials Volume: 508 Pages: 220-223
  • Peer Reviewed
• [Journal Article] Doping effects on the stacking faults in silicon crystals (2012)
  • Author(s): Y. Ohno, Y. Tokumoto and I. Yonenaga
  • Journal Title: Thin Solid Films Volume: 520 Pages: 3296-3299
  • Peer Reviewed
• [Journal Article] Interaction of dopant atoms with stacking faults in silicon (2012)
  • Author(s): Y. Ohno, Y. Tokumoto, H. Taneichi, I. Yonenaga, K. Togase and S. Nishitani
  • Journal Title: Physica B Volume: 407 Pages: 3006-3008
  • Peer Reviewed
• [Presentation] シリコン中におけるΣ 9{114}粒界と不純物の相互作用 (2014)
  • Author(s): 大野裕, 井上海平, 沓掛健太朗, 米永一郎, 海老澤直樹, 高見澤悠, 清水康雄, 井上耕治, 永井康介
  • Organizer: 日本物理学会2014春
  • Place of Presentation: 平塚
  • Year and Date: 20140327-30
• [Presentation] 高密度に転位を導入したSi 結晶へのMn 拡散によるMnSi 合金層形成 (2013)
  • Author(s): 後藤頼良, 大野裕, 米永一郎
  • Organizer: 第43回結晶成長国内会議
  • Place of Presentation: 長野
  • Year and Date: 20131106-08
• [Presentation] Three-dimensional impurity distribution at sigma-3{111} grain boundaries in Si by atom probe tomography combined with transmission electron microscopy (2013)
  • Author(s): Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida and S. Takeda
  • Organizer: 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: Tsukuba (Japan)
  • Year and Date: 20131104-08
• [Presentation] Growth of heavily indium doped Si (2013)
  • Author(s): K. Inoue, Y. Tokumoto, K. Kutsukake, Y. Ohno and I. Yonenaga
  • Organizer: The 19th American Conference on Crystal Growth
  • Place of Presentation: Keystone (USA)
  • Year and Date: 20130721-26
• [Presentation] Cu precipitation in CZ-Si crystals heavily doped with p-type dopant (2013)
  • Author(s): Y. Ohno, K. Inoue, K. Kutsukake, Y. Tokumoto, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi and S. R. Nishitani
  • Organizer: The 12th Asia Pacific Physics Conference
  • Place of Presentation: Chiba (Japan)
  • Year and Date: 20130714-19
• [Presentation] 塑性変形Si 結晶における転位を応用した不純物拡散挙動の研究 (2013)
  • Author(s): 後藤頼良, 沓掛健太朗, 徳本有紀, 大野裕, 米永一郎
  • Organizer: 東北大学研究所連携プロジェクト平成24年度報告会
  • Place of Presentation: 仙台
  • Year and Date: 2013-02-05
• [Presentation] Czochralski growth of highly In doped Si -Effect of co-doping of C and Ge- (2012)
  • Author(s): K. Inoue, Y. Ohno, K. Kutsukake, Y. Tokumoto and I. Yonenaga
  • Organizer: 7th International Workshop on Modeling of Crystal Growth
  • Place of Presentation: Taihei (Taiwan)
  • Year and Date: 20121028-31
• [Presentation] Dislocation Activities in Si under high-magnetic-field (2012)
  • Author(s): I. Yonenaga, Y. Ohno, Y. Tokumoto and K. Kutsukake
  • Organizer: 4th International Conference on Fundamental Properties of Dislocations
  • Place of Presentation: Budapest (Hungary)
  • Year and Date: 20120827-31
• [Presentation] Formation of BCC-Cu3Si in CZ-Si (2012)
  • Author(s): Y. Ohno, T. Ohsawa, K. Inoue, K. Kutsukake, Y. Tokumoto, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi and S. R. Nishitani
  • Organizer: 14th International Conference on Extended Defects in Semiconductors
  • Place of Presentation: Thessaloniki (Greece)
  • Year and Date: 20120624-29
• [Presentation] Interaction energy of dopant atoms with stacking faults in Si (2012)
  • Author(s): Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Togase and S. R. Nishitani
  • Organizer: The European Materials Research Society Spring Meeting
  • Place of Presentation: Strasbourg (France)
  • Year and Date: 20120514-18
• [Presentation] 高濃度ボロン添加シリコンにおける銅析出物の形成について (2012)
  • Author(s): 大澤隆亨, 大野裕, 徳本有紀, 沓掛健太朗, 井上海平, 米永一郎
  • Organizer: 日本物理学会2012春季大会
  • Place of Presentation: 西宮
  • Year and Date: 2012-03-24
• [Presentation] 高濃度ボロン添加シリコンにおける銅析出物の研究 その2 (2011)
  • Author(s): 大澤隆亨, 大野裕, 太子敏則, 徳本有紀, 成田一生, 井上海平, 米永一郎
  • Organizer: 日本物理学会 2011秋季大会
  • Place of Presentation: 富山
  • Year and Date: 20110921-24
• [Presentation] Interaction of dopant atoms with stacking faults in Si (2011)
  • Author(s): Y. Ohno, Y. Tokumoto, H. Taneichi, I. Yonenaga, K. Togase and S. Nishitani
  • Organizer: 26th International Conference on Defects in Semiconductors
  • Place of Presentation: Nelson (New Zealand)
  • Year and Date: 20110717-22