2011 Fiscal Year Final Research Report
Trial preparation for self-metallic thin films for rewritable three dimensional nanopattern
| Project/Area Number |
23656421
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Structural/Functional materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2011
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| Keywords | アモルファス材料 |
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| Research Abstract |
Pd-Cu-Ge metallic thin films of about 60 nm in thickness were deposited on Si wafers by vacuum evaporation with electric resistance heating. Glass transition temperature and crystallization temperature of those thin films were determined by measurement of electric resistance upon heating with four-probe potentiometric method. After heating the films up to crystallization temperatures, the thickness, density and surface roughness changed drastically. The density increased on crystalliation. The thickness decreased in corresponding to the increase of density. The roughness also increased on crytallization.
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