2013 Fiscal Year Final Research Report
Dielectric rod type photonic crystal laser using dilute nitride semiconductor light source
| Project/Area Number |
23686004
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Ehime University (2013)
Osaka University (2011-2012) |
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Principal Investigator |
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | 分子線エピタキシー / フォトニック結晶 / ナノワイヤ / 化合物半導体 / 希釈窒化物半導体 |
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| Research Abstract |
We investigated the fabrication of dielectric rod type photonic crystal laser using dilute nitride semiconductor nanostructures. The study was focused on to the growth of the dilute nitride nano-material using molecular bean epitaxy, and its application to photonic crystal device. We could obtain core-shell type GaAs/GaAsN nanowire. Further, the emission wavelength at the near infrared 950 nm was observed by controlling the amount of introduced nitrogen into the GaAsN layer. Introducing the GaInNAs quantum wells into a cavity structure on which rod-type photonic crystal is patterned, we observe close to tenfold enhancement of extracted luminescence efficiency from the surface depending on the correlated variation photonic bandgap.
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