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2013 Fiscal Year Final Research Report

Multi-band solar cell using strain-balanced quantum well of nitride semiconductors

Research Project

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Project/Area Number 23686048
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Tokyo

Principal Investigator

SUGIYAMA Masakazu  東京大学, 工学(系)研究科(研究院), 准教授 (90323534)

Project Period (FY) 2011-04-01 – 2014-03-31
Keywords量子井戸 / 歪み補償
Research Abstract

Aiming at the photocurrent generation on the basis of two-step photon absorption, which is a promising way of over 50% efficiency, quantum well structure was employed and its potential as a 3-level light absorbing medium. First, InGaAs/GaAsP strain-balanced quantum wells were investigated and a superlattice structure with the barriers thinner than 3 nm exhibited the photocurrent generation via 2-step photon absorption, probably due to extended carrier lifetime in the quantum confinement state owing to efficient carrier separation by tunneling transport.
Next, the strain-balanced stacking technology for InGaN/AlN system was established. This material system is ideal for a obtaining a large band offset which is required for the high efficiency by two-step photon absorption. The strain-balanced InGaN/AlN stack was superior to conventional InGaN/GaN in terms of crystal quality and photoluminescenc property. Finally, the carrier extraction from the nitride quantum wells was examined.

  • Research Products

    (13 results)

All 2014 2013 2012 2011 Other

All Journal Article (3 results) Presentation (9 results) Patent(Industrial Property Rights) (1 results) (of which Overseas: 1 results)

  • [Journal Article] A quantum-well superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration2013

    • Author(s)
      M. Sugiyama, Y. Wang; H. Fujii, H. Sodabanlu, K. Watanabe, Y. Nakano
    • Journal Title

      Journal of Physics D : Applied Physics

      Volume: v 46, n 2 Pages: 024001(11)

  • [Journal Article] Growth of strain- compensated InGaN/AlN multiple quantum wells on GaN by MOVPE2013

    • Author(s)
      K. Anazawa, H. Sodabanlu, K. Fujii, Y. Nakano, M. Sugiyama
    • Journal Title

      Journal of Crystal Growth

      Volume: vol. 370, No. 1 Pages: 82-86

  • [Journal Article] Photocurrent Generation by Two-Step Photon Absorption with Quantum-Well Superlattice Cell2012

    • Author(s)
      M. Sugiyama, Y. Wang, K. Watanabe, T. Morioka, Y. Okada, Y. Nakano
    • Journal Title

      IEEE J. Photovoltaics

      Volume: v 2, n 3 Pages: 298-302

  • [Presentation] MOVPE-grown GaN/AlN resonant tunnelling diode : impact of interfacial non- abruptness2014

    • Author(s)
      N. Itoh, H. Sodabanlu, M. Sugiyama, and Y. Nakano
    • Organizer
      17th International Conference on Metalorganic Vapor Phase Epitaxy
    • Place of Presentation
      Lausanne, Switzerland
    • Year and Date
      20140713-18
  • [Presentation] 未開拓THz帯レーザ開発に向けたサブバンド間遷移に関する研究2013

    • Author(s)
      伊藤成顕,ソダーバンルーハッサネット,杉山正和,中野義昭
    • Organizer
      第23回日本赤外線学会研究会
    • Place of Presentation
      防衛大学
    • Year and Date
      20131100
  • [Presentation] GaN/AlNを用いたサブバンド間遷移光吸収のシミュレーション2013

    • Author(s)
      伊藤成顕,ソダーバンルーハッサネット,杉山正和,中野義昭
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      同志社大学
    • Year and Date
      20130900
  • [Presentation] Simulation of intersubband transition in GaN-AlN multiple quantum wells2013

    • Author(s)
      N. Itoh, H. Sodabanlu, M. Sugiyama and Y. Nakano
    • Organizer
      12th International Conference on Intersubband transition in quantum wells (ITQW 2013)
    • Year and Date
      20130000
  • [Presentation] Impact of accumulated stress on the quality of InGaN/AlN MQWs on GaN grown by MOVPE2012

    • Author(s)
      K. Anazawa, H. Sodabanlu, K. Fujii, Y. Nakano and M. Sugiyama
    • Organizer
      International Workshop on Nitride Semiconductors 2012 (IWN 2012)
    • Place of Presentation
      Sapporo, Japan (TuP-GR-34)
    • Year and Date
      20121014-19
  • [Presentation] Growth of Strain-Compensated InGaN/AlN MQWs on GaN by MOVPE2012

    • Author(s)
      K. Anazawa, H. Sodabanlu, K. Fujii, Y. Nakano, and M. Sugiyama
    • Organizer
      16^<th> International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16)
    • Place of Presentation
      Busan, Korea (MoA3-5)
    • Year and Date
      20120520-25
  • [Presentation] MOVPE法によるInGaN/AlN多重量子井戸の結晶成長および評価2011

    • Author(s)
      穴澤風彦, ソダーバンルハッサネット, 藤井克司, 野義昭, 杉山正和
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学 (31a-ZE-8)
    • Year and Date
      20110800
  • [Presentation] Photocurrent Generation by Two-Step Photon Absorption with Quantum-Well Superlattice Cell2011

    • Author(s)
      M. Sugiyama, Y. Wang, K. Watanabe, T. Morioka, Y. Okada, Y. Nakano
    • Organizer
      Conference Record of the 37th IEEE Photovoltaic Specialists Conference
    • Year and Date
      20110000
  • [Presentation] MOVPE法によるGaN/AlN共鳴トンネルダイオード構造の作製-窒化物量子井戸構造の解析-

    • Author(s)
      伊藤成顕,ソダーバンルーハッサネット,杉山正和,中野義昭
    • Organizer
      電子デバイス研究会―機能ナノデバイスおよび関連技術―
    • Place of Presentation
      北海道大学
    • Year and Date
      00000000
  • [Patent(Industrial Property Rights)] 発光ダイオード素子およびその製造方法2013

    • Inventor(s)
      杉山 正和 ,マニッシュ マシュー,中 野 義昭,ソダーバンル ハッサネット
    • Industrial Property Rights Holder
      東京大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願2013-99378
    • Filing Date
      2013-05-10
    • Overseas

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Published: 2015-07-16  

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