Investigation of Preferential Source Generation Mechanism for the Realization of Bulk Crystal Growth of Indium Nitride

2013 Fiscal Year Final Research Report

• Project/Area Number: 23760006
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: TOGASHI Rie 東京農工大学, 工学(系)研究科(研究院), 助教 (50444112)
• Project Period (FY): 2011 – 2013
• Keywords: エピタキシャル / 結晶成長 / 窒化インジウム / HVPE / 熱力学解析

Research Abstract

In order to realize high-crystalline quality and thick InN layers, following studies were performed: (1) investigation of the influence of growth rate and grown thickness on InN crystalline quality using a conventional hydride vapor phase epitaxy (HVPE) system, (2) thermodynamic analysis of the In source zone for appreciable generation of InCl3, (3) design and development of a new HVPE system with a two-stage source generation for the generation of InCl3, and (4) investigation of high-speed InN growth in both In- and N-polarities using the new HVPE system.
The same growth rate of InN grown by new HVPE system was achieved only using around 1/40 times the total Cl2 input partial pressure of InN grown by conventional HVPE system. Thus, efficiency for the generation of InCl3 gas was significantly improved compared with conventional HVPE system. In and N polarity InN can be grown at high growth rates at high temperature, owing to the preferential formation of InCl3.

Research Products

• [Journal Article] Effect of High NH_3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates (2013)
  • Author(s): Rie Togashi, Sho Yamamoto, K. Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, and Akinori Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: Vol. 52 Pages: 08JD05-1-4
  • URL: http://jjap.jsap.jp/cgi-bin/getarticle?magazine=JJAP&volume=52&page=08JD05
  • Peer Reviewed
• [Presentation] High-Speed InN Growth Using a Novel Two-Stage Source Generation Hydride Vapor Phase Epitaxy System (2013)
  • Author(s): Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
  • Place of Presentation: Kloster Seeon, Seeon, Germany
  • Year and Date: 2013-10-03
• [Presentation] Demonstration of high-speed growth of InN by HVPE with a two-step precursor generation scheme (2013)
  • Author(s): Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisha University, Kyoto, Japan(17p-M6-3.)
  • Year and Date: 2013-09-17
• [Presentation] Temperature Dependence of InN Growth by a Novel HVPE System with Two-Step Generation of InCl_3 (2013)
  • Author(s): Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Gaylord National Resort & Convention Center, Washington, D.C., U.S.A.(A1.05.)
  • Year and Date: 2013-08-26
• [Presentation] Comparative Study on High-Speed InN Growth in Both In- and N-Polarities Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System (2013)
  • Author(s): Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
  • Organizer: 10th International Conference on Nitride Semiconductors (ICNS-10)
  • Place of Presentation: Gaylord National Resort & Convention Center, Washington, D.C., U.S.A.(A1.04.)
  • Year and Date: 2013-08-26
• [Presentation] High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System (2013)
  • Author(s): Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: Conference on LED and its industrial application '13 (LEDIA '13)
  • Place of Presentation: Pacifico Yokohama, Yokohama, Japan(LEDp3-15.)
  • Year and Date: 2013-04-24
• [Presentation] High-Speed Growth of InN Using a Two-Stage Source Generation HVPE System (2012)
  • Author(s): Rie Togashi, Ryota Imai, Sho Yamamoto, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
  • Organizer: Intensive Discussion on Growth of Nitride Semiconductors
  • Place of Presentation: Tohoku University, Sendai, Japan
  • Year and Date: 2012-10-22
• [Presentation] HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE (2012)
  • Author(s): Ryota Imai, Sho Yamamoto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi, and Akinori Koukitu
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: Sapporo Convention Center, Sapporo, Japan(TuP-GR-60.)
  • Year and Date: 2012-10-16
• [Presentation] Effect of high NH_3 input partial pressure on hydride vapor phase epitaxy of InN using nitrided (0001) sapphire substrates (2012)
  • Author(s): Rie Togashi, Sho Yamamoto, Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, and Akinori Koukitu
  • Organizer: International Workshop on Nitride Semiconductors 2012 (IWN2012)
  • Place of Presentation: Sapporo Convention Center, Sapporo, Japan(TuP-GR-55.)
  • Year and Date: 2012-10-16
• [Presentation] InN/sapphire(0001)MBEテンプレート上へのInN HVPEにおける成長速度の影響 (2011)
  • Author(s): 山本翔,東川義弘,富樫理恵,村上尚,熊谷義直,山口智弘,荒木努,名西やすし,纐纈明伯
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス(30a-ZE-12.)
  • Year and Date: 2011-08-30
• [Remarks] 所属研究室HPの成果発信欄
  • URL: http://www.tuat.ac.jp/~kumagai/