Spectrum-shape-controllable near-infrared light source based on multi-color quantumdots monolithically grown in selective areas

2012 Fiscal Year Final Research Report

• Project/Area Number: 23760015
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Wakayama University
• Principal Investigator: OZAKI Nobuhiko 和歌山大学, システム工学部, 准教授 (30344873)
• Project Period (FY): 2011 – 2012
• Keywords: 量子ドット / 近赤外広帯域光源 / MBE / 光コヒーレンストモグラフィー(OCT)

Research Abstract

We have developed a near-infrared broadband light source based on InAs/GaAs quantum dots (QDs) for optical coherence tomography (OCT).Self-assembled InAs-QDs possessuseful features for the OCT imaging: emissionswith long penetration depth in bio-samples and withbroadband spectrumdue to theircertain size distribution.We realized a broadband and spectrum-shape-controllable light source by using our developedtechnique formonolithic growth of InAs-QDs with different emission wavelengths. Thisdemonstrates a potentialfor novel NIR light source to obtainhigh qualityOCT images.

Research Products

• [Journal Article] Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 um by using quantum dot bi-layer forbroadband light source (2012)
  • Author(s): N. Ozaki, Y. Nakatani, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, E. Clark, R. A. HoggGrowth
  • Journal Title: J. Crystal Growth Volume: (in press)
  • DOI: DOI: 10.1016/j.jcrysgro.2012.12.110
  • Peer Reviewed
• [Journal Article] Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05um using In-flush technique for broadband near-infrared light source (2012)
  • Author(s): Yuji Hino, Nobuhiko Ozaki,Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto
  • Journal Title: J. Crystal Growth Volume: (in press)
  • DOI: DOI: 10.1016/j.jcrysgro.2012.12.077
  • Peer Reviewed
• [Journal Article] Broadband light source based on four-color self-assembled InAs quantum dot ensembles monolithically grown in selective areas (2012)
  • Author(s): Nobuhiko Ozaki, Koichi Takeuchi, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa, and Richard A. Hogg
  • Journal Title: IEICE Trans. Electron Volume: E95-C(2) Pages: 247-250
  • DOI: DOI: 10.1587/trasele.E95.C.247
  • Peer Reviewed
• [Presentation] Growth of stacked In-flushed-QD layers emitting at 1mm with Gaussian-like broadband spectrum (2013)
  • Author(s): Nobuhiko Ozaki, Yuji Hino, Shunsuke Ohkouchi, Naoki Ikeda, and Yoshimasa Sugimoto
  • Organizer: the 40thInternational Symposiumon Compound Semiconductors (ISCS2013)
  • Place of Presentation: Kobe Convention Center, Kobe, Japan
  • Year and Date: 20130519-23
• [Presentation] 近接二層積層によるGaAs基板上InAs-QDの発光長波長化の検討(II) (2013)
  • Author(s): 中谷擁平,尾崎信彦,大河内俊介,池田直樹,杉本喜正,Edmund Clarke,Richard Hogg
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 20130300
• [Presentation] 発光波長制御されたIn-flushed-QDの積層成長による1ミクロン帯広帯域発光 (2013)
  • Author(s): 日野雄司,尾崎信彦,大河内俊介,池田直樹,杉本喜正
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 20130300
• [Presentation] Monolithic growth of multi-color InAs-QD ensembles for broadband and spectrum-shape-controllable near-infrared light source (2012)
  • Author(s): Nobuhiko Ozaki, Koichi Takeuchi, Yuji Hino, Yohei Nakatani, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa, Richard A. Hogg
  • Organizer: 2012 Collaborative Conference on Crystal Growth (3CG 2012)
  • Place of Presentation: Orlando, Florida, USA
  • Year and Date: 20121211-14
• [Presentation] Expanding emission wavelength of self-assembled InAs quantum dots beyond 1.3-μm by usingthe QD bi-layer for broadband light source (2012)
  • Author(s): N. Ozaki, Y. Nakatani, S. Ohkouchi, N. Ikeda, Y. Sugimoto and R. Hogg
  • Organizer: the 17th International Conference on Molecular Beam Epitaxy (MBE2012)
  • Place of Presentation: Nara Prefectural New Public Hall, Nara, Japan
  • Year and Date: 20120923-28
• [Presentation] Controlling emission wavelength of InAs quantum dots using the In-flush technique for broadband 1.05-μm light source (2012)
  • Author(s): Y. Hino, N. Ozaki, S. Ohkouchi, N. Ikeda and Y. Sugimoto
  • Organizer: the 17thInternational Conference on Molecular Beam Epitaxy (MBE2012)
  • Place of Presentation: Nara Prefectural New Public Hall, Nara, Japan
  • Year and Date: 20120923-28
• [Presentation] In-flush法による1ミクロン帯発光InAs-QDの発光強度改善 (2012)
  • Author(s): 日野雄司,尾崎信彦,大河内俊介,池田直樹,杉本喜正
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区,松山大学文京キャンパス
  • Year and Date: 20120900
• [Presentation] 多色量子ドット並列構造による近赤外広帯域光源のスペクトル成形 (2012)
  • Author(s): 竹内晃一,尾崎信彦,大河内俊介,池田直樹,杉本喜正,小田久哉,浅川潔,Richard Hogg
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
  • Year and Date: 20120300
• [Presentation] 医療・生体イメージング光源に向けた1ミクロン帯発光InAs-QD作製 (2012)
  • Author(s): 日野雄司,尾崎信彦,大河内俊介,池田直樹,杉本喜正
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
  • Year and Date: 20120300
• [Presentation] 近接二層積層によるGaAs基板上InAs-QDの発光長波長化の検討 (2012)
  • Author(s): 中谷擁平,尾崎信彦,大河内俊介,池田直樹,杉本喜正
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
  • Year and Date: 20120300
• [Presentation] 多波長量子ドットによる近赤外広帯域光源開発とOCTへの応用 (2012)
  • Author(s): 尾崎信彦
  • Organizer: 第23回GRL浜松セミナー～若手研究者のための光・電子・情報科学に関する情報交換～
  • Place of Presentation: 静岡大学浜松キャンパス総合研究棟
  • Year and Date: 2012-01-25
• [Presentation] Selective-area growth of 4-color InAs-QD ensembles for broadband light source (2011)
  • Author(s): K. Takeuchi, N. Ozaki, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, R. A. Hogg
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM 2011)
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 20110928-30
• [Presentation] 90度回転メタルマスク法により作製した広帯域光源用4色量子ドットの光学評価 (2011)
  • Author(s): 竹内晃一,尾崎信彦,大河内俊介,池田直樹,杉本喜正,浅川潔,Richard Hogg
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス
  • Year and Date: 20110900