2013 Fiscal Year Final Research Report
Luminescence properties of Erbium-silicon-oxide Crystalline Compound on Silicon
| Project/Area Number |
23760016
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Toyohashi University of Technology (2012-2013)
Okayama University (2011) |
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Principal Investigator |
ISHIYAMA Takeshi 豊橋技術科学大学, 工学(系)研究科(研究院), 准教授 (40314653)
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| Project Period (FY) |
2011 – 2013
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| Keywords | シリコン / エルビウム / 赤外発光 |
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| Research Abstract |
The photoluminescence (PL) properties of crystalline Er-Si-O compound on silicon substrate prepared using a simple method through evaporation and thermal annealing have been investigated. Diffraction peaks corresponding to crystalline Er-Si-O were clearly detected in X-ray diffraction measurements. Er-related infrared luminescence was observed at around 1520 nm at room temperature. This luminescence of the crystalline Er-Si-O compound on Si was due not to direct excitation of the 4f shell of Er3+, but to excitation of the host Si, i.e. indirect excitation. The Er-related PL spectra also showed several peaks at room temperature, which reflected the splitting patterns of ground manifolds (4I15/2) for the 4f11 shell of Er3+. Temperature quenching of Er-related infrared luminescence was greatly reduced in the crystalline Er-Si-O compound prepared using the simple method.
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