2012 Fiscal Year Final Research Report
Fundamental study on surface recombination process and its effects on emission efficiency in nitride semiconductors
| Project/Area Number |
23760021
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo National College of Technology |
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Principal Investigator |
ONUMA Takeyoshi 東京工業高等専門学校, 一般教育科, 准教授 (10375420)
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| Project Period (FY) |
2011 – 2012
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| Keywords | 窒化物半導体 / 表面再結合 / 窒化ガリウム / 酸化亜鉛 酸化ガリウム / 再結合ダイナミクス / 半導体物性 / 結晶工学 |
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| Research Abstract |
Surface recombination in GaN and ZnO crystals was comparatively investigated usingsteady-state and time-resolved photoluminescence (PL) measurements. The measurementswere performed for various surface orientations (+c,-c, and m-plane surfaces), and themeasured PL intensity and lifetime showed distinct dependence on the surface orientation.The dependence clearly indicates that the surface recombination rate is modified by theeffects of surface band bending. The results were also verified by numerical analysisusing a rate equation model considering the diffusion of photoexcited carriers and theirrecombination processes on the surface and inside the crystal.
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