2012 Fiscal Year Final Research Report
Analysis of promoted oxidation reaction just below ultrathin films of transition metals grown on Si surfaces
| Project/Area Number |
23760027
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Yokohama National University |
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Principal Investigator |
OHNO Shinya 横浜国立大学, 工学研究院, 特別研究教員 (00377095)
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| Project Period (FY) |
2011 – 2012
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| Keywords | シリコン / 光電子分光 / 酸化反応 / 遷移金属 |
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| Research Abstract |
We found that promoted oxidation reaction occurs on titanium-covered silicon surfaces by oxygen exposure at room temperature. We investigated thickness and composition of the oxide layer in order to clarify this process. In the case of evaluation of the oxide thickness by photoelectron spectroscopy, it is desirable to use photon energies with large mean free path. We found that cautious analysis should be performed in order to evaluate the oxide composition. This viewpoint was obtained based on the analysis of titanium adsorption on oxidized silicon surfaces.
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