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2013 Fiscal Year Final Research Report

Correlation between Fundamental Properties and Resistive Switching Characterisitics in ReRAM

Research Project

  • PDF
Project/Area Number 23760282
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionKyoto University

Principal Investigator

YUSUKE Nishi  京都大学, 工学(系)研究科(研究院), 助教 (10512759)

Project Period (FY) 2011 – 2013
Keywords不揮発性メモリ / 抵抗変化 / 酸化物 / スパッタ / フォーミング
Research Abstract

Binary Transition Metarl Oxide (TMO)-based Resistive Random Access Memory (ReRAM) has attract much attention as the next-generation nonvolatile memory. However, correlation between fundamental properties and resistive switching characterisitics has never been fully clarified. In the study, we focused on the oxygen composition in oxides and investigated the effects on the resistive switching characteristics. We revealed that the formation of conductive filaments at forming process in Pt/NiO/Pt stack structures follows a weakest link theory, and that residual compressive stress in NiO thin films and forming voltage in the structures increaseed with increasing oxygen composition in NiO. Furthermore, NiO thickness dependence indicated the existence of thinner layer in which a conductive path percolates by applying voltage at forming process.

  • Research Products

    (17 results)

All 2014 2013 2012 2011

All Journal Article (2 results) Presentation (15 results)

  • [Journal Article] Microscopic Investigation of the Electrical Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells2013

    • Author(s)
      T. Iwata, Y. Nishi, and T. Kimoto
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: vol.52 Pages: 041801

  • [Journal Article] Effect of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures2011

    • Author(s)
      T. Iwata, Y. Nishi, and T. Kimoto
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: vol.50 Pages: 081102

  • [Presentation] NiO抵抗変化素子の伝導特性と抵抗状態の差異の新たな解釈2014

    • Author(s)
      岩田達哉,西佑介,木本恒暢
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Year and Date
      2014-03-19
  • [Presentation] Forming Characteristics of NiO-based Resistance Change Random Access Memory2014

    • Author(s)
      Y. Nishi, H. Sasakura, T. Iwata, and T. Kimoto
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Year and Date
      2014-03-18
  • [Presentation] 反応性スパッタNiO薄膜の電気特性に膜の微細構造が及ぼす影響2014

    • Author(s)
      岩田達哉,西佑介,木本恒暢
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Year and Date
      2014-03-17
  • [Presentation] NiO薄膜の膜質がPt/NiO/Pt素子のフォーミング電圧に及ぼす影響2013

    • Author(s)
      岩田達哉,西佑介,木本恒暢
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Year and Date
      2013-09-18
  • [Presentation] ニッケル酸化物を用いた抵抗変化メモリ素子のフォーミング特性に関する研究2013

    • Author(s)
      岩田達哉,西佑介,木本恒暢
    • Organizer
      第288回電気材料技術懇談会
    • Place of Presentation
      大阪大学
    • Year and Date
      2013-07-12
  • [Presentation] Impact of the Oxygen Amount of an Oxide Layer and Post Annealing on Forming Voltage and Initial Resistance of NiO-based Resistive Switching Cells2013

    • Author(s)
      T. Iwata, Y. Nishi, and T. Kimoto
    • Organizer
      2013 Materials Research Society Spring Meeting & Exhibit
    • Place of Presentation
      San Francisco, California, USA
    • Year and Date
      2013-04-05
  • [Presentation] Weibull Distribution of Forming Char acteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory2013

    • Author(s)
      Y. Nishi, T. Iwata, and T. Kimoto
    • Organizer
      2013 Materials Research Society Spring Meeting & Exhibit
    • Place of Presentation
      San Francisco, California, USA
    • Year and Date
      2013-04-04
  • [Presentation] Pt/ NiO/Pt積層構造におけるフォーミング特性分布2013

    • Author(s)
      西佑介,岩田達哉,木本恒暢
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-27
  • [Presentation] 金属/TiO2/金属積層構造の抵抗スイッチング特性に対する電極材料の影響2012

    • Author(s)
      沖元直樹,岩田達哉,西佑介,木本恒暢
    • Organizer
      電子情報通信学会2012シリコン材料・デバイス研究会
    • Place of Presentation
      京都大学
    • Year and Date
      2012-12-07
  • [Presentation] NiO薄膜を用いたReRAMにおけるフォーミング特性の分布2012

    • Author(s)
      堀江大典,西佑介,岩田達哉,木本恒暢
    • Organizer
      第73回応用物理学会秋季学術講演会
    • Place of Presentation
      愛媛大学・松山大学
    • Year and Date
      2012-09-14
  • [Presentation] Time-Dependent Forming Char acteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory2012

    • Author(s)
      Y. Nishi, T. Iwata, D. Horie, and T. Kimoto
    • Organizer
      2012 Materials Research Society Spring Meeting & Exhibit
    • Place of Presentation
      San Francisco, California, USA
    • Year and Date
      2012-04-11
  • [Presentation] Identification of the location of conductive filaments formed in Pt/NiO/ Pt resistive switching cells and investiga tion on their properties2012

    • Author(s)
      Y. Nishi, and T. Kimoto
    • Organizer
      2012 Materials Research Society Spring Meeting & Exhibit
    • Place of Presentation
      San Francisco, California, USA
    • Year and Date
      2012-04-11
  • [Presentation] Pt/ NiO/Pt抵抗変化素子に形成されたフィラメントの直接観察とその評価2012

    • Author(s)
      岩田達哉,西佑介,木本恒暢
    • Organizer
      第59回応用物理学会春季学術講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
  • [Presentation] Pt/NiO/Pt積層構造におけるフォーミング特性の時間依存2012

    • Author(s)
      西佑介,堀江大典,岩田達哉,木本恒暢
    • Organizer
      第59回応用物理学会春季学術講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-16
  • [Presentation] 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価2011

    • Author(s)
      岩田達哉,西佑介,木本恒暢
    • Organizer
      電子情報通信学会2011シリコン材料・デバイス研究会
    • Place of Presentation
      奈良先端科学技術大学院大学
    • Year and Date
      2011-12-16

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Published: 2015-06-25  

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