2012 Fiscal Year Final Research Report
Fabrication of piezoelectric-field enhanced excitonic devices operating at room-temperature with the use of oxynitride superlattices
| Project/Area Number |
23760285
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
ITAGAKI Naho 九州大学, システム情報科学研究院, 准教授 (60579100)
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| Project Period (FY) |
2011 – 2012
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| Keywords | 薄膜・量子構造 / エキシトニクス / 酸窒化物半導体 |
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| Research Abstract |
Excitonic transistor has attracted much attention because of its potential advantages such as high operation and interconnection speed, small dimensions, and low per consumption. The major challenges for excitonic devices are to increase the operating temperature. Here we have developed a novel semiconductor based on oxynitride and a novel device structure that uses piezoelectric field with the aim to obtain room-temperature operating excitonic devices.
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