2012 Fiscal Year Final Research Report
Development of charging sensor using semiconductor with ultra-high resolution and charging analysis of spacecraft materials irradiated by proton
| Project/Area Number |
23760292
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo City University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Keywords | 宇宙機 / 宇宙環境 / プロトン / 帯電 / PEA 法 / 半導体 / ポリイミド |
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| Research Abstract |
The spacecraft is always exposed to plasma and/or radioactive-rays such as 〓, 〓 and 〓-rays. When the insulating materials, in which the spacecraft is wrapped to keep temperature in it stable, are irradiated by the radioactive-rays, sometimes an unexpected accident due to an electrostatic discharge occurs. However, it has not known how the irradiation affects to change of the electrical properties of the materials. Therefore, as the satellite development needs the charging information and charging phenomena of surface materials of satellite on the orbit, we have developed the charging measurement system of it on the orbit with high radioactive-rays resistivity. In this paper, we started to develop new semiconductor sensor for charging measurement sensor using Pulsed electroacoustic (PEA) method. Furthermore, we also focused on an internal charging phenomenon on irradiated polyimide for spacecraft using small PEA system for irradiation using present polymer piezo sensor.
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