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2012 Fiscal Year Final Research Report

Crystal growth and electronic structures of fullerene / GaAs heterostructures

Research Project

  • PDF
Project/Area Number 23760293
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionWaseda University

Principal Investigator

NISHINAGA Jiro  早稲田大学, 高等研究所, 准教授 (90454058)

Project Period (FY) 2011 – 2012
Keywords有機・無機半導体ヘテロ界面 / フラーレン / GaAs / MBE
Research Abstract

Fullerene C_<60> molecules crystallize into a fcc structure on crystalline substrates. However, C_<60> crystals are very fragile and chemically unstable due to the weak binding energy, and it is very difficult to apply C_<60> crystals to practical devices. The motivation of this research is to fabricate C60 / III-V compound semiconductors heterostructures by using molecular beam epitaxy (MBE) which is the most used technique for the analysis of epitaxial growth process. We have concentrated on the study of characteristics of C_<60> epitaxial growth on GaAs substrates and the development of new devices using C_<60> molecules in GaAs lattices such as infrared detectors and memory devices.

  • Research Products

    (11 results)

All 2013 2012 2011 Other

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (3 results) Book (2 results) Remarks (1 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Crystalline and electrical characteristics of C_<60> uniformly doped GaAs layers2013

    • Author(s)
      J. Nishinaga and Y. Horikoshi
    • Journal Title

      J. Cryst. Growth

    • DOI

      DOI:10.1016/j.jcrysgro.2012.12.044

    • Peer Reviewed
  • [Journal Article] Electrical properties of C_<60> and Si codoped GaAs layers2012

    • Author(s)
      J. Nishinaga and Y. Horikoshi
    • Journal Title

      J. Vac. Sci. Technol. B

      Volume: 30 Pages: 02B116

    • DOI

      DOI:10.1116/1.3678205

    • Peer Reviewed
  • [Journal Article] Growth and characterization of C_<60>/GaAs interfaces and C60 doped GaAs2011

    • Author(s)
      J. Nishinaga and Y. Horikoshi
    • Journal Title

      J. Cryst. Growth

      Volume: 323 Pages: 135-139

    • DOI

      DOI:10.1016/j.jcrysgro.2010.11.068

    • Peer Reviewed
  • [Presentation] Crystal growth and structural characteristics of fullerene2012

    • Author(s)
      J. Nishinaga
    • Organizer
      GaAs interfaces, Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Orlando, USA
    • Year and Date
      20121211-14
  • [Presentation] Electrical characteristics of C_<60> doped GaAs layers grown by MEE2012

    • Author(s)
      J. Nishinaga and Y. Horikoshi
    • Organizer
      17th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Nara, Japan
    • Year and Date
      20120923-28
  • [Presentation] フラーレン添加GaAs薄膜の電気的特性2012

    • Author(s)
      西永慈郎、堀越佳治
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      20120315-18
  • [Book] Growth and characterization of fullerene/GaAs interfaces and C_<60> doped GaAs and AlGaAs layers, Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots, From Research to Mass Production (Editor: M. Henini)2012

    • Author(s)
      J. Nishinaga
    • Total Pages
      559-578
  • [Book] Growth and characterization of fullerene/GaAs interfaces and C_<60> doped GaAs layers, Crystal Growth: Theory, Mechanism, and Morphology (Editors: N. A. Mancuso and J. P. Isaac)2012

    • Author(s)
      J. Nishinaga and Y. Horikoshi
    • Total Pages
      235-261
  • [Remarks] 早稲田大学研究者データベース

    • URL

      https://www.wnp7.waseda.jp/Rdb/app/ip/ipi0211.html?lang_kbn=0&kensaku_no=4835

  • [Patent(Industrial Property Rights)] 太陽電池2013

    • Inventor(s)
      小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
    • Industrial Property Rights Holder
      小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
    • Industrial Property Number
      特許2013-054639
    • Filing Date
      2013-03-18
  • [Patent(Industrial Property Rights)] 太陽電池2013

    • Inventor(s)
      小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
    • Industrial Property Rights Holder
      小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
    • Industrial Property Number
      特許2013-061464
    • Filing Date
      2013-03-25

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Published: 2014-09-25  

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