Study on magnetoresistance in spin filter tunnel junctions with an antiferromagnetic layer

2014 Fiscal Year Final Research Report

• Project/Area Number: 23760295
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Ube National College of Technology (2011, 2013-2014); Kitakyushu National College of Technology (2012)
• Principal Investigator: SENBA Shinya 宇部工業高等専門学校, 電気工学科, 准教授 (40342555)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Keywords: 電気・電子材料 / 分子線エピタキシー / スピントロニクス

Outline of Final Research Achievements

A magnetic tunnel junction with ferromagnetic (FM) insulator EuS is expected to show a tunneling magnetoresistance induced by a spin-filtering effect. Growth conditions for fabricating a junction structure composed of EuS, FM semiconductor Ge1-xMnxTe and antiferromagnetic (AF) semiconductor MnTe by molecular beam epitaxy method were investigated. We also successfully manipulated a magnetic property of EuS by substituting Te for S. Results of magnetization measurements indicated that no exchange bias occurred on an interface between FM and AF layers in the proposed junction.

Free Research Field

電気・電子材料