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2013 Fiscal Year Final Research Report

Development of low emitance and short pulse photocathode

Research Project

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Project/Area Number 23760310
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electron device/Electronic equipment
Research InstitutionNagoya University

Principal Investigator

JIN Xiuguang  名古屋大学, 高等研究院, 特任助教 (20594055)

Project Period (FY) 2011 – 2012
Keywords半導体フォトカソード
Research Abstract

Photoemission from several types of AlGaAs based photocathodes has been studied. Graded AlGaAs photocathode with an internal electric field showed short response time and high quantum efficiency. Diffusion model combined with electron drift was developed to describe electron transport in graded AlGaAs layers. Our result demonstrated that the internal electric field is effective to control electron transport. The effect of the band structure on the emittance of the electron beam was also investigated. In the graded AlGaAs photocathode, the emittance was dependent on the topmost active layer

  • Research Products

    (22 results)

All 2014 2013 2012

All Journal Article (10 results) Presentation (10 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction2014

    • Author(s)
      X.G. J in, H. Nakahara, K. Saitoh, N. Tanaka, Y. Takeda
    • Journal Title

      Appl. Phys. Lett

      Volume: 104 Pages: 113106

  • [Journal Article] High performance spin-polarized photocathodes using a GaAs/GaAsP strain-compensated superlattice2013

    • Author(s)
      X.G. J in, A. Mano, F. Ichihashi, N. Yamamoto, Y. Takeda
    • Journal Title

      Appl. Phys. Express

      Volume: 6 Pages: 015801

  • [Journal Article] Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate2013

    • Author(s)
      X.G. J in, S. Fuchi, Y. Takeda
    • Journal Title

      J. Cryst. Growth

      Volume: 370 Pages: 204

  • [Journal Article] Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode2013

    • Author(s)
      X.G. J in, S. Matsuba, Y. Honda, T. Miyajima, M. Yamamoto, T. Utiyama, Y. Takeda
    • Journal Title

      Ultramicroscopy

      Volume: 130 Pages: 44-48

  • [Journal Article] Temporal Response Measurements of GaAs-Based Photocathodes2013

    • Author(s)
      Y. Honda, S. Matsuba, X.G. J in, T. Miyajima,M. Yamamoto, T. Uchiyama, M. Kuwahara, Y. Takeda
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 52 Pages: 086401

  • [Journal Article] Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM2013

    • Author(s)
      M. Kuwahara, Y. Nambo, S. Kusunoki, X.G. Jin, T. Nakanishi, K. Saitoh, H. Asano, T. Ujihara, Y. Takeda, T. Nakanishi, N. Tanaka
    • Journal Title

      Microscopy Advance Access

      Volume: 62 Pages: 607-614

  • [Journal Article] Mean Transverse Energy Measurement of Negative Electron Affinity GaAs-based Photocathode2012

    • Author(s)
      S. Matrsuba, Y. Honda, X.G. J in, T. Miyajima, M. Yamamoto, T. Uchiyama, M. Kuwahara, Y. Takeda
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51 Pages: 046402

  • [Journal Article] Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation2012

    • Author(s)
      X.G. J in, H. Nakahara, K. Saitoh, T. Saka, T. Ujihara, N. Tanaka, Y. Takeda, J. Cryst
    • Journal Title

      Growth

      Volume: 353 Pages: 84

  • [Journal Article] Fourfold increase of quantum efficiency in highly spin-polarized transmission-type photocathode2012

    • Author(s)
      X.G. J in, F. Ichihashi, A. Mano, N. Yamamoto, Y. Takeda
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51 Pages: 108004

  • [Journal Article] 30-kV spin-polarized transmission electron microscope using a GaAs-GaAsP strained superlattice photocathode2012

    • Author(s)
      M. Kuwahara, S. Kusunoki, X.G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, N. Tanaka
    • Journal Title

      Appl. Phys. Lett

      Volume: 101 Pages: 033102

  • [Presentation] High performance spin-polarized photocathode using GaAs/GaAsP strain-compensated superlattice2013

    • Author(s)
      X.G. J in, N. Yamamoto, A. Mano, M. Yamamoto, Y. Takeda
    • Organizer
      2013 International Workshop on Polarized Sources, Targets & Polarimetry
    • Place of Presentation
      The University of Virginia, Charlottesville, USA
    • Year and Date
      20130909-13
  • [Presentation] Novel development of very high brightness and highly spin-polarized electron gun with compact 3D spin manipulator for SPLEEM2013

    • Author(s)
      T. Koshikawa, T. Yasue, M. Suzuki, K. Tsuno, S. Goto, X.G. J in, Y. Takeda
    • Organizer
      IVC-19/ICSS-15 AND ICN+T
    • Place of Presentation
      Paris, France
    • Year and Date
      20130909-13
  • [Presentation] Nano-scale characterization of GaAsP/GaAs strained superlattice structures by nano-beam electron diffraction2013

    • Author(s)
      X.G. J in, H. Nakahara, K. Saitoh, N. Tanaka, Y. Takeda
    • Organizer
      17^<th> International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Mo116, Warsaw, Poland(Poster)
    • Year and Date
      20130811-16
  • [Presentation] High performance spin-polarized photocathode using strain compensated superlattice2012

    • Author(s)
      X.G. J in, A. Mano, F. Ichihashi, N. Yamamoto,○Y. Takeda
    • Organizer
      8^<th> international workshop on LEEM/PEEM
    • Place of Presentation
      Regal Kowloon Hotel, Hong Kong
    • Year and Date
      20121111-15
  • [Presentation] Picosecond electron bunch from GaAs/GaAsP strained superlattice photocathode2012

    • Author(s)
      X.G. J in, S. Matsuba, T. Miyajima, Y. Honda, M. Yamamoto, T. Utiyama, Y. Takeda
    • Organizer
      8^<th> international workshop on LEEM/PEEM
    • Place of Presentation
      Regal Kowloon Hotel, Hong Kong(Poster-session)
    • Year and Date
      20121111-15
  • [Presentation] Development of high performance photocathodes for microscopy and accelerator2012

    • Author(s)
      X.G. J in, F. Ichihashi, A. Mano, N. Yamamoto, Y. Takeda, M. Yamamoto, T. Miyajima, Y. Honda, T. Uchiyama, S. Matsuba
    • Organizer
      Photocathode Physics for Photoinjectors (P3)
    • Place of Presentation
      Cornell University, Ithaca, NY, USA
    • Year and Date
      20121008-10
  • [Presentation] High performance spin-polarized photocathode for microscopy2012

    • Author(s)
      X.G. J in, F. Ichihashi, A. Mano, N.Yamamoto, M. Suzuki, T. Yasue, T. Koshikawa, N. Tanaka, Y. Takeda
    • Organizer
      14^<th> Joint Vacuum Conference
    • Place of Presentation
      Libertas Rixos Hotel, Dubrovnik, Croatia(EMP-O41)
    • Year and Date
      20120604-08
  • [Presentation] Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate2012

    • Author(s)
      X.G. J in, S. Fuchi, Y. Takada
    • Organizer
      16^<th> International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Paradise Hotel, Busan, Korea(TuP-74)
    • Year and Date
      20120520-25
  • [Presentation] Effects of mis-orientation of crystal planes on thickness modulation in GaAs/GaAsP strained superlattice2012

    • Author(s)
      X.G. J in, H. Nakahara, K. Saitoh, T. Saka, H. Katruno, N. Tanaka, Y. Takeda
    • Organizer
      16^<th> International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea(WeP-61)
    • Year and Date
      20120520-25
  • [Presentation] Initial emittance and temporal response measurement for GaAs based photocathodes2012

    • Author(s)
      S. Matsuba, Y. Honda, T. Miyajima, T. Uchiyama, M. Yamamoto, X.G. J in, Y. Takeda
    • Organizer
      International Particle Accelerator Conference 2012, MOPPP035
    • Place of Presentation
      Ernest N. Morial onvention Center, New Orleans Louisiana, USA
    • Year and Date
      20120520-25
  • [Patent(Industrial Property Rights)] スピン偏極電子発生素子及びその作製方法2012

    • Inventor(s)
      金 秀光
    • Industrial Property Rights Holder
      金 秀光,渕 真悟,竹田美和
    • Industrial Property Number
      2012-108186
    • Filing Date
      20120500
  • [Patent(Industrial Property Rights)] 半導体フォトカソード2012

    • Inventor(s)
      金 秀光
    • Industrial Property Rights Holder
      金 秀光,竹田美和,山本将博,宮島 司,本田洋介
    • Industrial Property Number
      2012-221001
    • Filing Date
      20121000

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Published: 2015-06-25  

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