2012 Fiscal Year Final Research Report
Formation of non-polar quantum well using group-III nitrides fine single crystals as template
| Project/Area Number |
23760636
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Shizuoka University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Keywords | 力学 / 電子 / 電磁 / 光 / 熱物性 / III族窒化物 |
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| Research Abstract |
AlInN epitaxial growth was demonstrated by a Single-pass process or a Double-pass process. By the single-pass process, pillar structure InN crystals with Al contained were obtained although the crystals randomly grew (no epitaxial relationship between the crystals and substrate). The result indicated that InN should be grown priorto the AlInN layer growth. By the double-pass process, no film formation occurred by this process. Therefore the Al-In ratios were controlled by the weight ratios of AlI3a n d I n C l3sources. Al-In ratios of the obtained AlInN film were controlled within 0 to 15 % of In in the AlInN films.
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