• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2012 Fiscal Year Final Research Report

Clarification of surface reactions by interaction between ions and radicals in reactive plasma processes

Research Project

  • PDF
Project/Area Number 23760694
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Material processing/treatments
Research InstitutionNagoya University

Principal Investigator

TAKEDA Keigo  名古屋大学, 工学研究科, 助教 (00377863)

Project Period (FY) 2011 – 2012
Keywords原子状ラジカル / 表面損失確率 / 反応性プラズマ / 吸収分光法
Research Abstract

In this study, the spatial density distribution and surface loss probability of hydrogen atoms have been investigated by using vacuum ultraviolet absorption spectroscopy. From the results, we clarified the spatial distribution of hydrogen atom between upper and bottom electrodes in capacitively coupled plasmas with pure H_2 gas or H_2 and N_2 mixture gas. Moreover, the surface loss probability of hydrogen atom on silicon thin films during plasma chemical vapor deposition with inductively coupled SiH_4/H_2 plasma was quantitatively clarified.

  • Research Products

    (9 results)

All 2013 2012 2011 Other

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (7 results) Remarks (1 results)

  • [Journal Article] Surface loss probability of H radicals on silicon thin films in SiH_4/H_2plasma2013

    • Author(s)
      Y. Abe, A. Fukushima, K. Takeda, H.Kondo, K. Ishikawa, M. Sekine, M. Hori
    • Journal Title

      J. Appl. Phys

      Volume: Vol.113 Pages: 013303-1:6

    • Peer Reviewed
  • [Presentation] Relation between gaseous radicals and μc-Si film property in SiH4/H2 plasma CVD2013

    • Author(s)
      A. Fukushima, Y. Lu, Y. Abe, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori
    • Organizer
      5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      Nagoya
    • Year and Date
      20130128-0201
  • [Presentation] H2/N2 プラズマ中のラジカル密度へ前のプロセスが与える影響とその制御2013

    • Author(s)
      鈴木俊哉, 竹田圭吾,近藤博基,石川健治,関根誠,堀勝
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-27
  • [Presentation] Evaluation of Relationship between μC-Si Film Property and Flux Ratio of H Radicals to Film Precursors2012

    • Author(s)
      A. Fukushima, Y. Abe, Y. Lu, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori
    • Organizer
      The 11th APCPST and 25th SPSM
    • Place of Presentation
      Kyoto University ROHM Plaza, Kyoto
    • Year and Date
      20121002-05
  • [Presentation] Spectroscopic Determination of Radical Densities in SiH4/H2 Plasma2012

    • Author(s)
      Y. Abe, A. Fukushima, Y. Lu, Y. Kim, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine,M. Hori
    • Organizer
      The 11th APCPST and 25th SPSM
    • Place of Presentation
      Kyoto University ROHM Plaza, Kyoto
    • Year and Date
      20121002-05
  • [Presentation] Measurement of the flux ratio of hydrogen atom to film precursor for microcrystalline silicon solar cell2012

    • Author(s)
      Y. Abe, M. Hori, A. Fukushima, L. Ya, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine
    • Organizer
      5th international workshop on plasma spectroscopy
    • Place of Presentation
      France
    • Year and Date
      20120513-16
  • [Presentation] Surface Loss Probability of Hydrogen Radical on Silicon Thin Film in SiH4/H2 Plasma CVD2012

    • Author(s)
      K. Takeda, Y. Abe, H. Kondo, K. Ishikawa,M.Sekine, M. Hori
    • Organizer
      The 8th EU-Japan Joint Symposium on Plasma Processing "Atomic and Molecular Database for Plasma and Surfaces
    • Place of Presentation
      東大寺総合文化センター, 奈良
    • Year and Date
      2012-01-17
  • [Presentation] Surface reaction of hydrogen radical on plasma enhanced chemical vapor deposition of silicon thin films2011

    • Author(s)
      Y. Abe, K. Takeda, M. Hori, K. Ishikawa, H. Kondo, M. Sekine
    • Organizer
      The XXX International Conference on Phenomena in Ionized 0 1 2 300.10.20.30.40.5Surface loss probabilitySiH4flow (sccm)図 4 水素原子の表面損失確率のSiH4 流量依存性 Gases
    • Place of Presentation
      Queen's University Belfast, UK
    • Year and Date
      2011-08-29
  • [Remarks]

    • URL

      http://www.nuee.nagoya-u.ac.jp/labs/horilab/

URL: 

Published: 2014-09-25  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi