2012 Fiscal Year Final Research Report
Research on preparation of ultra thin multilayer film consisting of L10 ordered alloy and MgO for MRAM application
Project/Area Number |
23860047
|
Research Category |
Grant-in-Aid for Research Activity Start-up
|
Allocation Type | Single-year Grants |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Chuo University |
Principal Investigator |
|
Project Period (FY) |
2011 – 2012
|
Keywords | スピンエレクトロニクス / ナノ材料 / 結晶工学 / エピタキシャル / 超格子 |
Research Abstract |
The formation technique of magnetic tunnel junction (MTJ) consisting of ferromagnetic L1_0ordered alloy and MgO layers is investigated for future magnetoresistive random access memory (MRAM) devices. The structure is controlled in atomic level
|
Research Products
(14 results)