2012 Fiscal Year Final Research Report
Study of High-Spatial Resolution Strain Measurements in Semiconductor Devices Using Tip-Enhanced Raman Spectroscopy
| Project/Area Number |
23860051
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Meiji University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Keywords | tip-enhanced Raman / AFM Raman / Si, SiGe / strain / stress / polarized-Raman |
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| Research Abstract |
Tip-enhanced Raman spectroscopy (TERS) was realized by combining Raman spectroscopy and atomic force microscopy (AFM). Far-field signal (background) frequently interrupts us to derive the TERS signal from obtained spectra. To suppress the background, the polarization properties of both TERS signal and background were examined in detail. As a result, high-intensity ratio of the TERS signal to background was obtained in the conditions of [110] incidence and p and s polarizations of the incident and scattered lights, respectively. Anenhancement factor of approximately 1.6 〓 105 was obtained by comparing the experimental results and calculations based on the tip-enhanced modeling with the “tip-amplification tensor.” The obtained value of the enhancement factor was higher than the previously reported value of about104. The reason for the high enhancement factor is considered to be the tip apex remaining in the vicinity of the sample surface in the shear-force AFM measurements.
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